Photoluminescence decay times and quantum yields were measured at 77 K in the spectra of two Si-doped diamond films grown by the chemical-vapor deposition technique. A decay time of 950 ps for both films and a quantum yield of 0.05 for one film were determined for the Si center zero-phonon optical transition at 737 nm ͑1.6823 eV͒. Two broad subbands with decay times of 55 and 650 ps and yields of 8ϫ10 Ϫ4 were observed in the luminescence at 600, 650, and 720 nm and ascribed to an sp 2 nondiamond carbon phase.
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