Picosecond photoluminescence decay of Si-doped chemical-vapor-deposited diamond films

Abstract

Photoluminescence decay times and quantum yields were measured at 77 K in the spectra of two Si-doped diamond films grown by the chemical-vapor deposition technique. A decay time of 950 ps for both films and a quantum yield of 0.05 for one film were determined for the Si center zero-phonon optical transition at 737 nm ͑1.6823 eV͒. Two broad subbands with decay times of 55 and 650 ps and yields of 8ϫ10 Ϫ4 were observed in the luminescence at 600, 650, and 720 nm and ascribed to an sp 2 nondiamond carbon phase.

Photophysics of single silicon vacancy centers in diamond: implications for single photon emission

“…2). Thus, the observed quantum efficiency is comparable to previous measurements on SiV ensembles in polycrystalline films yielding η qe = 5% [29]. The values determined here, however, do not straightforwardly represent the internal quantum efficiency, i.e., the probability for a radiative decay of the SiV center in bulk diamond.…”

Density functional simulations of silicon-containing point defects in diamond

“…Oxygen also appears to suppress the uptake of silicon in CVD growth. 16 In addition, the TLS is distributed highly inhomogeneously, 17,18 has a very short radiative lifetime ͑ϳ1-4 ns͒, 19,20 is associated with a vibrational mode 21 at 515 cm −1 , and uniaxial stress measurements indicate either a D 2 or C 2 symmetry. 22 The proximity of the vibrational mode to the Raman frequency of bulk silicon has been used as an argument to assign this system to one containing a Si-Si bond.…”

Multiple intrinsically identical single-photon emitters in the solid state

“…It has a strong optical transition with a prominent zero-phonon line (ZPL) at 737 nm and only a weak phonon sideband [17][18][19][20][21]. Structurally, it is comprised of a silicon atom located between adjacent vacancies in the diamond lattice [15,22,23] ( Figure 1a). The strong ZPL has sparked interest, but large variation in spectral properties between individual sites [16] has limited the value of SiV − as a single photon emitter.…”