We demonstrate that silicon-vacancy (SiV) centers in diamond can be used to efficiently generate coherent optical photons with excellent spectral properties. We show that these features are due to the inversion symmetry associated with SiV centers. The generation of indistinguishable single photons from separated emitters at 5 K is demonstrated in a Hong-Ou-Mandel interference experiment. Prospects for realizing efficient quantum network nodes using SiV centers are discussed.

We investigate phonon induced electronic dynamics in the ground and excited states of the negatively charged silicon-vacancy ( − SiV ) centre in diamond. Optical transition line widths, transition wavelength and excited state lifetimes are measured for the temperature range 4 K-350 K. The ground state orbital relaxation rates are measured using time-resolved fluorescence techniques. A microscopic model of the thermal broadening in the excited and ground states of the − SiV centre is developed. A vibronic process involving single-phonon transitions is found to determine orbital relaxation rates for both the ground and the excited states at cryogenic temperatures. We discuss the implications of our findings for coherence of qubits in the ground states and propose methods to extend coherence times of − SiV qubits. IntroductionColour centres in diamond have emerged as attractive systems for applications in quantum metrology, quantum communication, and quantum information processing [1][2][3]. Diamond has a large band gap which allows for optical control, and it can be synthesized with high purity, enabling long coherence times as was demonstrated for nitrogen-vacancy ( − NV ) spin qubits [4]. Among many colour centres in diamond [5,6], the negatively charged silicon-vacancy ( − SiV ) centre stands out due to its desirable optical properties. In particular, near transform-limited photons can be created with high efficiency due to the strong zero-phonon line emission that constitutes ∼70% of the total emission. − SiV centres can also be created with a narrow inhomogeneous distribution that is comparable to the transform limited optical line width [7]. These optical properties, due to the inversion symmetry of the system which suppresses effects of spectral diffusion, recently enabled demonstration of two-photon interference from separated emitters [8] that is a key requirement for many quantum information processing protocols [9][10][11][12].Interfacing coherent optical transitions with long-lived spin qubits is a key challenge for quantum optics with solid state emitters [13][14][15][16][17]. This challenge may be addressed using optically accessible electronic spins in − SiV centres [18]. It has recently been demonstrated that coherent spin states can be prepared and read out optically [19,20], although the spin coherence time was found to be limited by phonon-induced relaxation in the ground states [19]. Here we present the first systematic study of the electron-phonon interactions that are responsible for relaxation within the ground and excited states of the − SiV centre. This is achieved by measuring the temperature dependence of numerous processes within the centre. A comprehensive microscopic model is then developed to account for the observations. In section 4.1 we discuss the implications of these phonon processes for spin coherences in the − SiV ground state, and identify approaches that could extend the spin coherences.

Emitters of indistinguishable single photons are crucial for the growing field of quantum technologies. To realize scalability and increase the complexity of quantum optics technologies, multiple independent yet identical single-photon emitters are required. However, typical solid-state single-photon sources are inherently dissimilar, necessitating the use of electrical feedback or optical cavities to improve spectral overlap between distinct emitters. Here we demonstrate bright silicon vacancy (SiV À ) centres in low-strain bulk diamond, which show spectral overlap of up to 91% and nearly transform-limited excitation linewidths. This is the first time that distinct single-photon emitters in the solid state have shown intrinsically identical spectral properties. Our results have impact on the application of single-photon sources for quantum optics and cryptography.

We report on the noise spectrum experienced by few nanometer deep nitrogen-vacancy centers in diamond as a function of depth, surface coating, magnetic field and temperature. Analysis reveals a double-Lorentzian noise spectrum consistent with a surface electronic spin bath in the low frequency regime, along with a faster noise source attributed to surface-modified phononic coupling. These results shed new light on the mechanisms responsible for surface noise affecting shallow spins at semiconductor interfaces, and suggests possible directions for further studies. We demonstrate dynamical decoupling from the surface noise, paving the way to applications ranging from nanoscale NMR to quantum networks.Nanoscale magnetic imaging and magnetic resonance spectroscopy, recently demonstrated using nitrogenvacancy (NV) color centers in diamond [1][2][3][4], are capable of yielding unique insights into chemistry, biology and physical sciences. The sensitivity and resolution of these techniques relies heavily on the NV coherence properties, which empirically are much worse for shallow NV centers than those deep within bulk diamond [5]. An understanding of the origin of surface related noise enables optimal decoupling or surface passivation to be performed. It is critical not only for improving NV applications in quantum sensing [6,7], quantum information processing [8], and photonics [9], but is also an outstanding problem in many solid-state quantum systems (e.g. [10,11]). Furthermore, overcoming noise at the diamond interface is a significant obstacle to realizing hybrid quantum systems with NV centers [12,13], which are expected to play an important role in realistic devices.For NV centers in bulk diamond, noise sources limiting coherence times have been identified with internal nuclear and electronic spin baths, and interactions with phonons [14,15]. Although additional noise sources related to the diamond surface, and affecting shallow NVs, have been observed [16], their origin is not currently well understood. This phenomenon is general and has been observed at various semiconductor interfaces, resulting in the development of several theoretical models, which are still without significant experimental confirmation [17,18]. Here we use shallow implanted NV centers as nanoscale sensors to perform spectroscopy of the diamond surface. We use dynamical decoupling techniques together with measurements of longitudinal (T 1 ) relaxation under varying conditions (surface coating, magnetic field, temperature) in order to characterize the surface-induced noise. The strength and frequency dependence of fluctuations as a function of the NV distance from the surface are investigated with nanometer precision. We directly measure the noise spectrum experienced by shallow NV centers, revealing an unexpected double-Lorentzian structure which indicates contributions from two distinct noise sources. We find that the low frequency noise experienced by shallow NVs is consistent with electronic spin impurities on the surface [ Fig. 1(a)], w...