MOSFETs with high quality ultra thin (EOT-10.3A) Hf02 gate stacks and self-aligned dual poly-Si gate are fabricated and characterized. Both n-and p-MOSFETs show good electron and hole mobility, respectively, and excellent sub-threshold swings. In addition, Hf02 gate stack exhibits excellent thermal stability with poly-Si gate up to 1O5O0C/30s gate activation annealing and shows excellent TDDB reliability characteristics with negligible charge trapping and SILC under high-field stressing.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.