The characterization of the noise emissions of DC-DC
converters at system level is critical to optimize the design of the
detector and define rules for the integration strategy. This paper presents
the impedance effects on the noise emissions of DC-DC converters at system
level. Conducted and radiated noise emissions at the input and at the output
from DC-DC converters have been simulated for different types of power
network and FEE impedances. System aspects as granularity, stray
capacitances of the system and different working conditions of the DC-DC
converters are presented too. This study has been carried out using
simulation models of noise emissions of DC-DC converters in the real
scenario. The results of these studies show important recommendations and
criteria to be applied to integrate the DC-DC converters and decrease the
system noise level.
The RD53A read-out chip (65 nm CMOS) is a large-scale demonstrator for ATLAS and CMS phase 2 pixel upgrades. It is one of the key elements of the serial powering scheme for the next generation of pixel detectors. The susceptibility of the RD53A chip with respect to external EM noise has an impact on the integration strategies (grounding and shielding schemes) and operating conditions of future Pixel detectors. This paper presents a detailed analysis of the RD53A chip susceptibility to RF conducted disturbances in order to understand and address noise issues of RD53A Chip before the pixel upgrade installation.
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