The purpose of this chapter is to review the history of plastics, describe the different kinds of plastics, their applications and their benefits, giving several examples of plastics found in our daily lives. The current chapter also provides deep insight into the qualitative characteristics of plastics, while describing their chemical nature in simple terms.
Electroplated Cu is being used by the major semiconductor .manufacturers as an interconnect material, because it offers a lower line resistance and better electromigration performance over conventional A1 metallization. This paper describes the mechanism of "super-fill" as well as gap fill, microstructure, and film composition of electroplated copper. A combination of optimized Cu plating additive chemistry and current waveform enable complete gap fill of 0.07 -0.1 pm features (AR > 10: 1) as well as strong (1 1 1) texture, large grains (> 3 pm) with a large fraction of twin grain boundaries and controlled impurities content in electroplated Cu films. Electroplating process stability was maintained through the on-line analysis (p/t <0.3) of organic and inorganic bath ingredients and their replenishment.
IntroductionIt has been reported in the literature (1, 2) that copper electroplating (EP) has the ability to provide bottom up fill or "super-fill" resulting in the complete gap fill of narrow trenches and vias. This is commonly assigned to the action of organic additives added in small amounts to the plating bath. However, the mechanism of action of these additives is still unclear. The role of the additives, current conditions, and substrate texture on the microstructure and impurities incorporation into plated Cu film is also not well understood. We will review in this paper the mode of action of plating additives and provide simulation and experimental results of gap fill in sub 0.1 pm features. The simulations were on wafer and reactor levels such as tertiary current distribution on the wafer surface and fluid flow in the plating reactor as well as feature level including shape evolution. Cu electrodeposited structure as a function of current density, inhibition strength and substrate texture will be discussed. Impurities were also studied in the plated copper vs. plating conditions.
This paper describes front-end architectures of modern multi-mode, multi-band cellular phones and will discuss the requirements on RF filtering in such applications. Special focus will be on dual mode (GSM and WCDMA) cellular phones with four GSM and three WCDMA bands. On the one hand driven by forward integration -e.g., from PA function via transmit front-end to a fully integrated radio -on the other hand influenced by new requirements of 3G systems and the integration of complementary access, filtering components such as SAW and BAW filters have to solve several increased requirements simultaneously. New technologies are required to follow the demand of increased RF performance, reduced PCB area consumption and continuously decreasing component costs.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.