Articles you may be interested inClassical size effect in oxide-encapsulated Cu thin films: Impact of grain boundaries versus surfaces on resistivity J. Vac. Sci. Technol. A 26, 605 (2008); 10.1116/1.2938395Electrical resistivity of Cu films deposited by ion beam deposition: Effects of grain size, impurities, and morphological defect
The reactive ion etching characteristics of gallium nitride (GaN) in silicon tetrachloride plasmas (SiCl4, 1:1/SiCl4:Ar, and 1:1/SiCl4:SiF4) in the pressure range between 20 and 80 mTorr have been investigated. For the pressure range investigated, etch rates are found to be essentially identical for the different gas mixtures and also invariant with pressure. However for all gas mixtures, etch rates increased monotonically with increasing plasma self-bias voltage exceeding 50 nm/min at 400 V. This is one of the highest etch rate ever reported for GaN. Smooth and anisotropic etch profiles are demonstrated for structures of submicrometer dimensions. The slight overcut observed in the etch profiles is attributed to the significant role of physical ion bombardment in the etching mechanism. Auger electron spectroscopy show that a wet etch in dilute HF is needed to clear the Si (in the form of SiOx) embedded in the near surface of GaN during etching thereby restoring etched surfaces to their virgin state.
Organosilicate glasses, also known as carbon-doped oxides (CDO), have been studied for application as interlayer dielectrics in microprocessors. Fourier-transform infrared (FTIR) spectroscopy is used here to monitor CDO film compositions prepared by plasma-enhanced chemical vapor deposition of dimethyldimethoxysilane. The Si–CH3/Si–O peak area ratios represent the relative content of these functional groups within the films, and indicate compositional changes in the films produced. Additionally, a close inspection of the C–H stretching modes shows a large peak at 2962 cm−1 due to the CH3 asymmetric stretch and a smaller shoulder to the right, made up of up to three other C–H stretching modes. The shoulder intensity divided by the asymmetric stretch intensity provides another metric that tracks compositional changes in the film. Product compositions indicated by FTIR also correlate well with physical properties such as dielectric constant, hardness, bulk modulus, and cohesive strength.
The effect of laser thermal processing ͑LTP͒ on implantation-induced defect evolution and transient enhanced diffusion ͑TED͒ of boron was investigated. A 270-Å-thick amorphous layer formed by 10 keV Si ϩ implantation was melted and regrown using a 20 ns ultraviolet laser pulse. Transmission electron microscopy revealed that recrystallization of the amorphous layer following LTP results in a high concentration of stacking faults and microtwins in the regrown region. Also, the end-of-range loop evolution during subsequent 750°C furnace annealing, is different in a LTP sample compared to a control sample. Secondary ion mass spectroscopy of a boron marker layer 6000 Å below the surface showed that LTP alone produced no enhanced diffusion. However, during subsequent furnace annealing, the boron layer in the LTP sample experienced just as much TED as in the control sample which was only implanted and furnace annealed. These results imply that laser melting and recrystallization of an implantation-induced amorphous layer does not measurably reduce the excess interstitials released from the end-of-range implant damage. © 1999 American Institute of Physics. ͓S0003-6951͑99͒00149-7͔Continued scaling of the transistor to sub-100 nm dimensions requires the formation of ultrashallow highly doped abrupt junctions for contact formation. A box-shaped, high dopant concentration profile could ideally meet such a requirement. 1 Ion implantation and conventional rapid thermal annealing inevitably lead to less than ideal Gaussian or exponential dopant profile. Also, the interaction between implantation induced point defects and dopant atoms during annealing can considerably broaden the profile shape through transient enhanced diffusion ͑TED͒. One proposed method for circumventing some of these problems is the use of laser annealing. 2 Various approaches proposed include: melting and regrowing crystalline silicon in the presence of a dopant ͑the PGILD process͒ or preamorphization of the surface by implantation followed by a dopant implant into the amorphous material and finally laser melting only the amorphous material ͓also called laser thermal processing ͑LTP͔͒. 2-4 The advantage of the second method is that lower temperatures can be used because amorphous Si melts at a temperature 300°C lower than crystalline Si. This is important because it allows thickness of the melted region to be controlled by the preamorphization.One question that remains is does LTP have an advantage in the transient enhanced diffusion reduced from the implant. It is well known that after implantation induced amorphization of Si, there exists a highly damaged region in the crystalline material just beyond the amorphous/ crystalline interface. 5 This layer, referred to as the end-ofrange ͑EOR͒ damage region, is known to contain a large supersaturation of interstitials. During annealing these interstitials are released and flow both toward the surface and into the bulk, resulting in TED of the common dopants ͑e.g., B, As, P͒. 6 This TED has the undesirable effe...
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.
hi@scite.ai
10624 S. Eastern Ave., Ste. A-614
Henderson, NV 89052, USA
Copyright © 2024 scite LLC. All rights reserved.
Made with 💙 for researchers
Part of the Research Solutions Family.