An effective supercontinuum (SC) generation is demonstrated by injecting picosecond self Q-switched modelocked Nd:GdVO 4 laser pulses into a 1-m long microstructured fiber. The laser is operated at wavelength 100-nm away from the longer zero-dispersion of this dual zero-dispersion wavelength microstructured fiber. The phenomena of modulation instability, stimulated Raman effect, and dispersive wave can be sequentially observed from experimental results, leading to spectral broadening as pumping increases.
Nonlinear optical absorption of ZnO thin film grown by the laser molecular beam epitaxy was investigated by the Z-scan method using a frequency-doubled femtosecond Ti:sapphire laser. Due to near-exciton resonance, an enormous enhancement of two photon absorption (TPA) is about 3000 cm/GW at 390 nm which is about 6.5 times larger than the previously reported at two-photon exciton resonance in near-IR regime and 710 times larger than that of ZnO bulk measured at 532 nm. Besides, the free-carrier absorption resulting from linear absorption and TPA becomes essential when the excitation approaches the exciton resonance.
Hall, current–voltage, and deep-level transient spectroscopy measurements were used to characterize the electrical properties of metalorganic chemical vapor deposition grown undoped, Er- and Pr-implanted GaN films. Only one deep level located at 0.270 eV below the conduction band was found in the as-grown GaN films. However, four defect levels located at 0.300, 0.188, 0.600, and 0.410 eV below the conduction band were found in the Er-implanted GaN films after annealing at 900 °C for 30 min, and four defect levels located at 0.280, 0.190, 0.610, and 0.390 eV below the conduction band were found in the Pr-implanted GaN films after annealing at 1050 °C for 30 min. The origins of the deep defect levels are discussed.
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