Zinc oxide (ZnO) is now often used as a transparent conductive oxide for contacts in thinfilm silicon solar cells. This paper presents a study of ZnO material deposited by the lowpressure chemical vapour deposition technique, in a pressure range below the pressures usually applied for the deposition of this kind of material. A temperature series has been deposited, showing a morphological transition around 150 1C. ZnO samples deposited with temperatures just higher than this transition are constituted of large grains highly oriented along a single crystallographic orientation. These ''monocrystals'' lead to low resistivity values, showing a clear correlation between the size of the surface grains and the electrical performance of corresponding films. Additionally, these large grains also yield ZnO layers with high transparency and high light-scattering power, specially suitable for solar cell technology based on thin-film silicon.
The authors report on the fabrication of microcrystalline silicon p-i-n solar cells with efficiencies close to 10%, using glass coated with zinc oxide (ZnO) deposited by low pressure chemical vapor deposition (LPCVD).LPCVD front contacts were optimized for p-i-n microcrystalline silicon solar cells by decreasing the free carrier absorption of the layers and increasing the surface roughness. These modifications resulted in an increased current density of the solar cell but also in significantly reduced fillfactor (FF) and open-circuit voltage (Voc). In order to avoid these reductions, a new surface treatment of the ZnO is introduced. It transforms profoundly the surface morphology by turning the typical V-shaped valleys of the LPCVD ZnO into U-shaped valleys and by erasing from the surface small-sized pyramids and asperities. As a result, for fixed deposition parameters, the p-i-n microcrystalline silicon solar cell efficiency increased from 3.3% to 9.2%Further optimization of the microcrystalline silicon solar cell on this 'new' type of LPCVD ZnO front contact has led to an efficiency of 9.9%.
Low pressure chemical vapour deposition (LP-CVD) ZnO as front transparent conductive oxide (TCO), developed at IMT, has excellent light-trapping properties for a-Si:H p-i-n single-junction and 'micromorph' (amorphousymicrocrystalline silicon) tandem solar cells. A stabilized record efficiency of 9.47% has independently been confirmed by NREL for an amorphous silicon singlejunction p-i-n cell (;1 cm ) deposited on LP-CVD ZnO coated glass. Micromorph tandem cells with an initial efficiency of
Vapor-based processes are promising options to deposit metal halide perovskite solar cells in an industrial environment due to their ability to deposit uniform layers over large areas in a controlled environment without resorting to the use of (possibly toxic) solvents. In addition, they yield conformal layers on rough substrates, an important aspect in view of producing perovskite/ crystalline silicon tandem solar cells featuring a textured silicon wafer for light management. While the inorganic precursors of the perovskite are well suited for thermal evaporation in high vacuum, the sublimation of the organic ones is more complex to control due to their high vapor pressure. To tackle this issue, we developed a vapor transport deposition chamber for organohalide deposition that physically dissociates the organic vapor evaporation zone from the deposition chamber. Once evaporated, organic vapors, here methylammonium iodide (MAI), are transported to the deposition chamber by a carrier gas through a showerhead, ensuring a spatially homogeneous conversion of PbI 2 templates to the perovskite phase. The method enables the production of homogeneous perovskite layers on a textured 6 in. wafer. Furthermore, small-scale methylammonium lead iodide solar cells are also processed to validate the quality of the absorbers produced by this hybrid thermal evaporation/vapor transport deposition process.
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