Determining Components of Series Resistance from Measurements on a Finished Cell

Meier, D.L.; Good, E.A.; Garcı́a, R.; Bingham, B.L.; Yamanaka, Sadanori; Chandrasekaran, V.; Bucher, C.

doi:10.1109/wcpec.2006.279656

Cited by 63 publications

(19 citation statements)

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“…In order to understand this effect, R SERIES was broken down into constituent components for representative cells from each emitter/contact firing condition [21]. Ag gridline resistance, emitter sheet resistance, and Ag/c-Si contact resistance were found to dominate total R SERIES for all cells.…”

Section: B Solar Cell Light I-v Performance and Contact Resistance Amentioning

confidence: 99%

Investigation of the Mechanism Resulting in low Resistance Ag Thick-Film Contact to Si Solar Cells in the Context of Emitter Doping Density and Contact Firing for Current-Generation Ag Paste

Cooper

Tate

Renshaw

et al. 2014

IEEE J. Photovoltaics

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Screen-printed thick-film Ag metallization has become highly successful in crystalline Si (c-Si) photovoltaics. However, a complete understanding of the mechanism resulting in low resistance contact is still lacking. In order to shed light on this mechanism for current-generation Ag paste, Si solar cells were fabricated using a range of emitter doping densities and contact firing conditions. Low resistance contact was found to vary as a function of emitter surface P concentration ([P su rface ]) and peak firing temperature. Scanning electron microscope (SEM) analysis revealed thin interfacial glass films (IGF) under the bulk Ag gridline. SEM analysis also showed increasing Ag crystallite density as both emitter [P su rface ] and peak firing temperature increased. Two mechanisms are proposed in forming low resistance contact to highly doped emitters: 1) formation of ultrathin IGF and/or nano-Ag colloids at low firing temperature, and 2) formation of Ag crystallites at high firing temperature. However, on lightly doped emitters, low resistance contact was achieved only at higher firing temperatures, concomitant with increasing Ag crystallite density, and suggests that thin IGF decorated with nano-Ag colloids may not be sufficient for low resistance contact to lightly doped emitters.

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Section: B Solar Cell Light I-v Performance and Contact Resistance Amentioning

confidence: 99%

Investigation of the Mechanism Resulting in low Resistance Ag Thick-Film Contact to Si Solar Cells in the Context of Emitter Doping Density and Contact Firing for Current-Generation Ag Paste

Cooper

Tate

Renshaw

et al. 2014

IEEE J. Photovoltaics

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“…As for cell C, it can be seen that all the electrical performances are the worst, especially in fill factor (FF). The factor to influence FF in a solar diode is the contact resistance between metal and semiconductor [28,29]. The blisters in cell C are almost out-gassed, resulting in random distribution of voids.…”

Section: Methodsmentioning

confidence: 99%

Investigation on the passivated Si/Al2O3 interface fabricated by non-vacuum spatial atomic layer deposition system

Lien¹,

Yang²,

Wu³

et al. 2016

Nano Online

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. Investigation on the passivated Si/Al2O3 interface fabricated by non-vacuum spatial atomic layer deposition system, nano Online (2016). DOI: https://doi.org/10.1515/nano.11671_2015.154Originally published in: Shui-Yang Lien, Chih-Hsiang Yang, Kuei-Ching Wu, Chung-Yuan Kung. Investigation on the passivated Si/Al2O3 interface fabricated by nonvacuum spatial atomic layer deposition system, Nanoscale Research Letters. 10 (2015). DOI: https://doi.org/10.1186/s11671-015-0803-9Lien et al., 2015. This is an Open Access article distributed under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/4.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly credited.Currently, aluminum oxide stacked with silicon nitride (Al2O3/SiNx:H) is a promising rear passivation material for high-efficiency P-type passivated emitter and rear cell (PERC). It has been indicated that atomic layer deposition system (ALD) is much more suitable to prepare high-quality Al2O3 films than plasma-enhanced chemical vapor deposition system and other process techniques. In this study, an ultrafast, non-vacuum spatial ALD with the deposition rate of around 10 nm/min, developed by our group, is hired to deposit Al2O3 films. Upon post-annealing for the Al2O3 films, the unwanted delamination, regarded as blisters, was found by an optical microscope. This may lead to a worse contact within the Si/Al2O3 interface, deteriorating the passivation quality. Thin stoichiometric silicon dioxide films prepared on the Si surface prior to Al2O3 fabrication effectively reduce a considerable amount of blisters. The residual blisters can be further out-gassed when the Al2O3 films are thinned to 8 nm and annealed above 650°C. Eventually, the entire PERC with the improved triple-layer SiO2/Al2O3/SiNx:H stacked passivation film has an obvious gain in open-circuit voltage (V oc) and short-circuit current (J sc) because of the increased minority carrier lifetime and internal rear-side reflectance, respectively. The electrical performance of the optimized PERC with the V oc of 0.647 V, J sc of 38.2 mA/cm2, fill factor of 0.776, and the efficiency of 19.18% can be achieved.Keywords: PERC; Non-vacuum spatial atomic layer deposition; Al2O3/SiNx:H stacked rear passivation; Blister; Triple-layer SiO2/Al2O3/SiNx ; H stacked passivation films BackgroundFor the past decade years, dielectric films have become promising materials applied in high-efficiency silicon solar cells due to their superior surface passivation effect.An attractive candidate for outstanding Si surface passivation is aluminum oxide (Al2O3), which can be deposited by physical vapor deposition (PVD) system [ 1], chemical vapor deposition (CVD) system [2-4], liquid-phase deposition (LPD) technique [5,6], and atomic layer deposition (ALD) system [7][8][9]. Generally, ALD system is the most suitable choice for the deposition of Al2O3 owing to some advantages: (i) capable of producing very thin conformal and unif...

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“…For a screen-printed front junction n-type silicon solar cell, Figure 5 shows the schematic components of total R s in a finished cell, including: (1) sheet resistance of the p + emitter layer (R emitter ) and the n + back surface field layer (R BSF ); (2) bulk resistance of n-type wafer (R substrate ); (3) metallic resistance of the front gridline (R finger ) and the rear gridline (R' finger ); (4) contact resistance between screenprinted metal contacts and silicon on the front side (R contact ) and the rear side (R' contact ); and (6) metallic resistance of the front bus-bar (R busbar ) and the rear bus-bar (R' busbar ). The specific values of these components can be approximately estimated by the approach developed in [7]. The R sh is particularly due to the non-ideality of the pn-junction and some defects near the junction, especially around cell edges.…”

Section: Resistance Lossmentioning

confidence: 99%

Screen‐Printed Front Junction n‐Type Silicon Solar Cells

Tao¹

2016

Printed Electronics - Current Trends and Applications

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This chapter aims to provide students/engineers/scientists in the field of photovoltaics with the basic information needed to understand the operating principles of screenprinted front junction n-type silicon solar cells. The relevant device fabrication processing is described, from texturing, diffusion, passivation and antireflection coating, to screenprinted and fired-through metallization as well as the technologies that are currently used for most industrially produced solar cells. A brief description of the characterisation approaches is given and discussed for an understanding and analysis of the loss mechanisms in a finished cell, including resistance loss, recombination loss, and optical loss. The application of advanced cell concepts and the improved technologies for further increasing cell efficiency, such as selectively doping structure and tunnel oxide passivated contact, are addressed for screen-printed front junction n-type silicon solar cells.

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Determining Components of Series Resistance from Measurements on a Finished Cell

Cited by 63 publications

References 1 publication

Investigation of the Mechanism Resulting in low Resistance Ag Thick-Film Contact to Si Solar Cells in the Context of Emitter Doping Density and Contact Firing for Current-Generation Ag Paste

Investigation of the Mechanism Resulting in low Resistance Ag Thick-Film Contact to Si Solar Cells in the Context of Emitter Doping Density and Contact Firing for Current-Generation Ag Paste

Investigation on the passivated Si/Al2O3 interface fabricated by non-vacuum spatial atomic layer deposition system

Screen‐Printed Front Junction n‐Type Silicon Solar Cells

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