4H-SiC epilayers were irradiated with either protons or electrons and electrically active defects were studied by means of deep level transient spectroscopy. Motion of defects has been found to occur at temperature as low as 350–400 K. Indeed, the application of an electric field has been found to enhance modifications in defect concentrations that can also occur during long time annealing at elevated temperature. Two levels have been revealed and labeled B and M. Two other levels, referred to as S1 and S2 and located at 0.40 and 0.71 eV below the conduction band edge have been studied in detail (capture cross sections, profiling, formation energy, activation energy during annealing). The S1 and S2 levels have been found to exhibit a one to one relation and are proposed to be two charge states of the same acceptor center, labeled the S center.
In the search of defect creation by a mechanism involving collective electron excitation, samples of silicon are irradiated by Kr and Xe ions, the eneergies of which were 3.7 and 3.5 GeV, respectively. The damage is investigated using the in‐situ resistance measurement on samples piled‐up along the beam direetion for the high electronic stopping power range between 3.7 to 14 MeV/μm. A normalization of all the data by the number of displaced atoms per atom resulting from elastic collisions shows that inelastic collisions are ineffieient in the defect creation.
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