Passivated 0.15 µm pseudomorphic high electron mobility
transistors (PHEMTs) were fabricated by combining a wide head T-shaped
gate, formed using a dose split method of electron beam lithography,
with a short source-gate separation, using formed an electron
cyclotron resonance dry recess etching process. The threshold voltage
of the devices showed 50 mV variation across three-inch wafers. The
extrinsic transconductance and cutoff frequency of the PHEMT devices
were 688 mS/mm and 82.6 GHz, respectively. The lowest minimum noise
figure, NF
min, of the PHEMT devices was observed
around 80% of the saturation drain current at 30 GHz and
V
ds = 2 V. The devices exhibited a
NF
min as low as 0.99 dB with an associated gain
of 9.1 dB at 30 GHz. This noise figure value is the lowest data ever
reported for a PHEMT device using a dry recess process.
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