CVD TiN using Tic14 and N€b chemistry has been implemented successllly in cylindncally shaped Tal03 storage capacitor as a bamer layer in poly-SiRiN double upper electrode. Electrical characteristics of TaZOs capacitor with CVD TiN double electrode were superior to that with PVD TiN and it was attributed to nearly 100% conformality of CVD TiN. However, it was also found that minimizing chlorine content in CVD TiN f i l m was essential to achieve low leakage current level, and in-situ post annealing of CVD TiN f i l m in N€% ambient was effective in reducing chIorine content.
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