Electrical characterization of CVD TiN upper electrode for Ta/sub 2/O/sub 5/ capacitor

Abstract

CVD TiN using Tic14 and N€b chemistry has been implemented successllly in cylindncally shaped Tal03 storage capacitor as a bamer layer in poly-SiRiN double upper electrode. Electrical characteristics of TaZOs capacitor with CVD TiN double electrode were superior to that with PVD TiN and it was attributed to nearly 100% conformality of CVD TiN. However, it was also found that minimizing chlorine content in CVD TiN f i l m was essential to achieve low leakage current level, and in-situ post annealing of CVD TiN f i l m in N€% ambient was effective in reducing chIorine content.

Characterization of Interfaces between HfO2 Thin Film and Metal Electrode with Pre–Post Treatments

“…For example, Cl impurities in the TiN electrode affect not only the resistivity of the electrode but also the charge leakage from the top electrode to the bottom electrode. 18,19) The undesirable interface reaction often occurs by post-thermal treatment, resulting in a reduction in the charge capacity of the capacitor in DRAM devices, and thus should be suppressed by appropriate treatments.…”