Abstract-The ultra-fast switching of power MOSFETs, in ~1ns, is very challenging. This is largely due to the parasitic inductance that is intrinsic to commercial packages used for both MOSFETs and drivers. Parasitic gate and source inductance not only limit the voltage rise time on the MOSFET internal gate structure but can also cause the gate voltage to oscillate. This paper describes a hybrid approach that substantially reduces the parasitic inductance between the driver and MOSFET gate as well as between the MOSFET source and its external connection. A flip chip assembly is used to directly attach the die-form power MOSFET and driver on a PCB. The parasitic inductances are significantly reduced by eliminating bond wires and minimizing lead length. The experimental results demonstrate ultra-fast switching of the power MOSFET with excellent control of the gate-source voltage.
Recent information has shown the importance of the V1/ V2 domain as a target in HIV-1 vaccines. This includes the localization of epitopes to potently neutralizing antibodies to this region, the demonstration that binding between a site in V1/V2 and α4β7 receptors facilitates infection in primary CD4-positive T cells, and the demonstration that the presence of antibodies binding to the native form of the V1/V2 domain of HIV-1 gp120 correlated with protection in the RV144 vaccine trial. These results highlight the need to better understand the structure and immunological properties of this region, in order to optimally express the relevant targets in HIV-1 vaccines.
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