We have fabricated boron ion-implanted ZnO thin films by ion implantation into sputtered ZnO thin films on a glass substrate. An investigation of the effects of ion doses and activation time on the electrical and optical properties of the films has been made. The electrical sheet resistance and resistivity of the implanted films are observed to increase with increasing rapid thermal annealing (RTA) time, while decreasing as the ion dose increases. Without any RTA process, the variation of the carrier density is insensitive to the ion dose. With the RTA process, however, the carrier density of the implanted films increases and approaches that of the un-implanted ZnO film as the ion dose increases. On the other hand, the carrier mobility is shown to decrease with increasing ion doses when no RTA process is applied. With the RTA process, however, there is almost no change in the mobility. We have achieved the optical transmittance as high as 87% within the visible wavelength range up to 800 nm. It is also demonstrated that the work function can be engineered by changing the ion dose during the ion implantation process. We have found that the work function decreases as the ion dose increases.
Intrinsic and phosphorus-doped hydrogenated microcrystalline silicon (microc-Si:H) films were prepared using inductively coupled plasma chemical vapor deposition (ICP-CVD) method. Structural, electrical and optical properties of these films were studied as a function of silane concentration, ICP source power and PH3/SiH4 gas ratio. Characterization of these films from Raman spectroscopy and X-ray diffraction revealed that the conductive film exists in microcrystalline phase embedded in an amorphous network. The condition of electrical properties (sigma(d): approximately 10(-7) S/cm, sigma(ph): approximately 10(-4) S/cm) and activation energy (0.55 eV), satisfied with properties of intrinsic microc-Si:H, was obtained at 1200 W of ICP power and 2% of silane concentration, respectively. At PH3/SiH4 gas ratio of 0.09%, dark conductivity has a maximum value of approximately 18.5 S/cm and optical bandgap also a maximum value of approximately 2.39 eV. The deposition rate was not satisfactory (4.9 angstroms/s) at same condition.
We report the fabrication and characterization of a new type of double quantum dot (QD) structure. We utilize standard CMOS processing steps without any modification to fabricate the double QD. We form three CMOS poly-Si gates with oxide sidewall spacers in series on a silicon-on-insulator nanowire. The QDs are defined by implanted n+ region between the finger gates, and no negative bias on the finger gates is needed. The sidewall spacers act as implantation masks and the size of the QD is smaller than the lithographic spacing between two finger gates. Characterization results exhibit clear Coulomb oscillations with two peak splitting and saw-tooth shaped Coulomb diamond. The simulation based on the model of single electron tunneling through double QDs reproduces the measured results with reasonable parameters.
The enhancement of out-coupling efficiency of organic light emitting diode (OLED) using SiO2-polymer composite layers was investigated. The SiO2-polymer composite was made from a SiO2 nanopowder and commercial UV-hardeners. The composite layer was coated on glass by dip-coating method in a SiO2 suspension, followed by spin-coating of 1 microm thick UV-hardener of was found that the optical properties were depend on the quantity of SiO2 nanopowder in the composite layer and dispersion of SiO2 suspension. 194/440 nm size of SiO2 nanopowders were added to the composite layer to enhance the light scattering effect. The OLED device which the SiO2-polymer composite layer was applied showed enhanced out-coupling efficiency around 30%.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.