In this article, we present summaries of the evolution of surface morphology resulting from the irradiation of single-crystal silicon with femtosecond laser pulses. In the first section, we discuss the development of micrometer-sized cones on a silicon surface irradiated with hundreds of femtosecond laser pulses in the presence of sulfur hexafluoride and other gases. We propose a general formation mechanism for the surface spikes. In the second section, we discuss the formation of blisters or bubbles at the interface between a thermal silicon oxide and a silicon surface after irradiation with one or more femtosecond laser pulses. We discuss the physical mechanism for blister formation and its potential use as channels in microfluidic devices.
As augmented reality and wearable technology increase in popularity there is a demand for truly see-through glasses-like displays. For high transparency optical systems a high-brightness display is required to achieve high quality images, especially in bright ambient environments. We integrate thin film polycrystalline silicon transistors with conventional III-V LED materials to achieve the brightness and efficiency demands. This paper outlines the various methods for fabricating emissive LED microdisplays and shows, for the first time, an active matrix LED array using thin film silicon transistors.
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