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The effect of H2O and O3 oxidants on the behavior of residual C and N-related impurities as well as Si out-diffusion and interfacial layer formation in atomic-layer-deposited La2O3 films grown at 250 °C were examined using in situ x-ray photoelectron spectroscopy. The silicate formation was suppressed in a La2O3 film grown using O3 compared to that deposited using H2O, but interfacial layer growth was enhanced. The accumulation of C and N-related residues with low binding energy, which originated from incomplete reactions, was suppressed in La2O3 films grown using O3. However, the use of O3 resulted in La-carbonate phase in film.

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Recent experiments have demonstrated the ability to alleviate Fermi-level pinning, resulting in reduced Schottky barrier heights (SBHs) and reduced contact resistivity by inserting thin layers of dielectric at the contact interface. In this letter, FinFETs with dielectric SBH tuning layers are investigated and shown to have reduced contact resistance over the control wafer. The reduced contact resistivity results in an ≈25% increase in drive current as well as a reduction of R S/D by 100 Ω · μm. Contact chain measurement shows a 10-Ω · μm 2 reduction in specific contact resistivity over the control wafer associated with a 100-meV reduction in SBH. Routes to further improvements in device performance are discussed, including key material considerations for dielectric tuning layers. Index Terms-Contact resistance, FinFETS, semiconductorinsulator interfaces, semiconductor-metal interfaces.A CCORDING to the International Technology Roadmap for Semiconductors [1], one of the key challenges in the coming technology nodes is parasitic external resistance of which contact resistivity is the largest component. In order to scale both traditional planar bulk devices and future fully depleted multigate devices, parasitic contact resistivity must be reduced to ≈0.1 Ω · μm 2 on Si [1]. This is an enormous challenge for Si and poses an even larger problem if alternative channel substrates are considered. At present, silicide can provide a specific contact resistivity (ρ CO ) in the range of 3-10 Ω · μm 2 [2] but is limited by both the midgap Schottky barrier height (SBH) and the solid solubility of dopants in Si [3], [4]. Of these two limitations, adjusting the SBH is viewed as the best approach for contact resistivity reduction with silicide as doping levels are routinely at maximum solid solubility. While silicide is the contact material of choice in CMOS today, it will need to be replaced in the upcoming nodes due to Fermilevel pinning that limits the minimum SBH obtainable by silicide to ≈0.3 V from the conduction band edge (CBE) or valence band edge [3]. Additionally, silicide cannot be formed on alternative channel (III-V or other) substrates, and alloys of III-V or other semiconductors with transition metals do not achieve the robust cluster of physical and electrical properties that have made silicide so popular [5], [6]. In choosing a contact technology for future nodes, one must consider simultaneously the ultimate achievable contact resistivity, contact geometry, substrate material, and junction requirements. With the approach of 3-D and/or nonplanar devices, a conformal orientationindependent contact process is desired. Additionally, since the substrate material for future nodes is unclear at present, it is desirable to have a low-resistance contact methodology that is widely applicable to many semiconductors. Finally, given the extremely shallow junctions that will be employed in future nodes, it is the key to have a contact methodology that does not consume substrate material and maintains the nanometerscale junct...

We have investigated the effect of trimethyl aluminum (TMA) and water (H2O) half‐cycle treatments on HF‐treated, and O3‐oxidized GaN surfaces at 300 °C. The in‐situ X‐ray photoelectron spectroscopy results indicate no significant re‐growth of Ga–O–N or self‐cleaning on HF‐treated and O3‐oxidized GaN substrates with exposure to water and TMA. This result is different from the self‐cleaning effect of Ga2O3 seen on sulfur‐treated GaAs or InGaAs substrates. O3 causes aggressive oxidation of GaN substrate and direct O–N bonding compared to H2O. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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