Lead halide perovskite solar cells with the high efficiencies typically use high-temperature processed TiO2 as the electron transporting layers (ETLs). Here, we demonstrate that low-temperature solution-processed nanocrystalline SnO2 can be an excellent alternative ETL material for efficient perovskite solar cells. Our best-performing planar cell using such a SnO2 ETL has achieved an average efficiency of 16.02%, obtained from efficiencies measured from both reverse and forward voltage scans. The outstanding performance of SnO2 ETLs is attributed to the excellent properties of nanocrystalline SnO2 films, such as good antireflection, suitable band edge positions, and high electron mobility. The simple low-temperature process is compatible with the roll-to-roll manufacturing of low-cost perovskite solar cells on flexible substrates.

Large single crystals serve as an ideal platform for investigating intrinsic material properties and optoelectronic applications. Here we develop a method, namely, room-temperature liquid diffused separation induced crystallization that uses silicone oil to separate the solvent from the perovskite precursors, to grow high-quality perovskite single crystals. The growth kinetics of perovskite single crystals using this method is elucidated, and their structural and optoelectronic properties are carefully characterized. The resultant perovskite single crystals, taking CH3NH3PbBr3 as an example, exhibit approximately 1 µs lifetime, a low trap density of 4.4 × 109 cm−3, and high yield of 92%, which are appealing for visible light or X-ray detection. We hope our findings will be of great significance for the continued advancement of high-quality perovskite single crystals, through a better understanding of growth mechanisms and their deployment in various optoelectronics. The diffused separation induced crystallization strategy presents a major step forward for advancing the field on perovskite single crystals.

We have developed a new method to introduce defect passivation agents using an in situ technique for planar p–i–n perovskite solar cells, during the anti-solvent deposition step.

Perovskite photodetectors (PDs) with tunable detection wavelength have attracted extensive attention due to the potential application in the field of imaging, machine vision, and artificial intelligence. Most of the perovskite PDs focus on I‐ or Br‐based materials due to their easy preparation techniques. However, their main photodetection capacity is situated in the visible region because of their narrower bandgap. Cl‐based wide bandgap perovskites, such as CsPbCl3, are scarcely reported because of the bad film quality of the spin‐coated Cl‐based perovskite, due to the poor solubility of the precursor. Therefore, ultraviolet detection using high‐quality full inorganic perovskite films, especially with high thermal stability of materials and devices, is still a big challenge. In this work, high‐quality single crystal CsPbCl3 microplatelets (MPs) synthesized by a simple space‐confined growth method at low temperature for near‐ultraviolet (NUV) PDs are reported. The single CsPbCl3 MP PDs demonstrate a decent response to NUV light with a high on/off ratio of 5.6 × 103 and a responsivity of 0.45 A W−1 at 5 V. In addition, the dark current is as low as pA level, leading to detectivity up to 1011 Jones. Moreover, PDs possess good stability and repeatability.

Light absorbers have drawn intensive attention as crucial components for solar-energy harvesting, thermal emission tailoring, modulators, etc. However, achievement of light absorbers with wide bandwidth remains a challenge thus far. Here, a thin, unprecedentedly ultrabroadband strong light absorber is proposed and experimentally demonstrated, which consists of periodic taper arrays constructed by an alumina-chrome multilayered metamaterial (MM) on a gold substrate. This MM can change from a hyperbolic material to an anisotropic dielectric material at different frequency ranges and the special material features are the fundamental origins of the ultrabroadband absorption. The absorber is quite insensitive to the incident angle, and can be insensitive to the polarization. One two-dimensional periodic array of 400-nm height MM tapers is fabricated. The measured absorption is over 90% over almost the entire solar spectrum, reaching an average level of 96%, and remains high (above 85%) even in the longer-wavelength range till 4 μm. The proposed absorbers open up a new avenue to realize broadband thin light-harvesting structures.

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Efficient planar antimony sulfide (Sb2S3) heterojunction solar cells have been made using chemical bath deposited (CBD) Sb2S3 as the absorber, low-temperature solution-processed tin oxide (SnO2) as the electron conductor and poly (3-hexylthiophene) (P3HT) as the hole conductor. A solar conversion efficiency of 2.8% was obtained at 1 sun illumination using a planar device consisting of F-doped SnO2 substrate/SnO2/CBD-Sb2S3/P3HT/Au, whereas the solar cells based on a titanium dioxide (TiO2) electron conductor exhibited a power conversion efficiency of 1.9%. Compared with conventional Sb2S3 sensitized solar cells, the high-temperature processed mesoscopic TiO2 scaffold is no longer needed. More importantly, a low-temperature solution-processed SnO2 layer was introduced for electron transportation to substitute the high-temperature sintered dense blocking TiO2 layer. Our planar solar cells not only have simple geometry with fewer steps to fabricate but also show enhanced performance. The higher efficiency of planar Sb2S3 solar cell devices based on a SnO2 electron conductor is attributed to their high transparency, uniform surface, efficient electron transport properties of SnO2, suitable energy band alignment, and reduced recombination at the interface of SnO2/Sb2S3.

In recent years, hybrid organic–inorganic perovskites have emerged as promising photosensing materials for next-generation solution-processed photodetectors, achieving high responsivity, fast speed, and large linear dynamic range. In particular, perovskite photoresistors possess low-cost fabrication and easy integration with low dimensional structures. However, a relatively large dark current is still limiting the further development of perovskite photoresistors. Herein, we introduce full-inorganic perovskite polycrystalline microwires for high-performance photodetection, in order to enhance the device stability. Furthermore, dark current and noise can be effectively suppressed by tuning the contacts. All-inorganic CsPbBr3 microwires with a number of nanocrystals on the wire surface are prepared by a simple, low-cost, two-step, solution-processed method at room temperature. Photodetectors based on this CsPbBr3 polycrystalline single microwire are assembled on indium tin oxide electrodes and demonstrate a decent responsivity up to 118 A/W and a fast response within 40 ms. In addition, such optimized photoresistors possess a fairly tiny dark current and noise, which result in an improved detectivity of >1012 Jones and demonstrate excellent characteristics to detect weak light.