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Metallic nanowires are known to break into shorter fragments due to the Rayleigh instability mechanism. This process is strongly accelerated at elevated temperatures and can completely hinder the functioning of nanowire-based devices like e.g. transparent conductive and flexible coatings. At the same time, arranged gold nanodots have important applications in electrochemical sensors. In this paper we perform a series of annealing experiments of gold and silver nanowires and nanowire junctions at fixed temperatures 473, 673, 873 and 973 K (200 °C, 400 °C, 600 °C and 700 °C) during a time period of 10 min. We show that nanowires are especially prone to fragmentation around junctions and crossing points even at comparatively low temperatures. The fragmentation process is highly temperature dependent and the junction region breaks up at a lower temperature than a single nanowire. We develop a gold parametrization for kinetic Monte Carlo simulations and demonstrate the surface diffusion origin of the nanowire junction fragmentation. We show that nanowire fragmentation starts at the junctions with high reliability and propose that aligning nanowires in a regular grid could be used as a technique for fabricating arrays of nanodots.

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The conductive properties of vertically aligned germanium nanowires, with mean diameters of 50 and 100 nm, within anodized aluminum oxide (AAO) templates have been characterized by conductive atomic force microscopy (C-AFM) and macrocontact measurements. C-AFM was used to determine the electrical transport properties of individual nanowires within the arrays, while macrocontacts were used to measure the mean current-voltage characteristics of groups of nanowires. Contact resistance between the nanowires and metal macrocontacts was minimized by polishing and gradual etching of the AAO surface, to expose the nanowires, prior to deposition of the contacts. Impedance measurements were used to analyze the importance of defects on the charge transport properties of the germanium nanowire arrays. Conductivity data from C-AFM and macrocontact measurements were found to be comparable suggesting that both methods are inherently suitable for evaluating the electrical transport properties of encapsulated nanowires within a matrix. These results are significant as the ability to make good ohmic contacts to nanowires, within well-defined arrays, is key for the future "bottom-up" fabrication of multilayered device architectures for future electronic and optoelectronic devices.

Spatially distributed DNA oligomer arrays on Au(111) surfaces were created by one-step co-assembly of mixed monolayers of alkanethiol-conjugated DNA and mercaptohexanol (MCH). Tapping-mode AFM was used to visualize the distribution of DNA molecules on the surface and to study the mechanical properties of individual molecules. The DNA coating density increased nonlinearly with increasing mole fraction of DNA oligomer to MCH in the coating solution. For imaging in air, where surfaces are coated with a thin layer of water, the interaction between the AFM tip and the different structures on the monolayer varies between attractive and repulsive depending on the tapping amplitude, set-point ratio, and tip shape. It was found that both duplex and single-stranded DNA molecules extend approximately vertically upward from the surface.

Here we present for the first time a study of the photoresistive properties and dynamics of ordered, high-density arrays of germanium nanowire photoresistors. Germanium is a wellknown semiconducting material with an indirect bandgap, E g , of approximately 0.66 eV (temperature T = 300 K) [1] and has been widely used for the fabrication of photodetectors, [2][3][4][5] radiation detectors, [6][7][8] charged particle and photon tracking devices, [9] far-infrared photoresistors, [10] and numerous other devices. [11] During the last few years there has also been increasing interest in the use of nanostructures (quantum dots and wires) of both germanium and silicon as materials for potential applications in sensors, nanophotonics, and nanoelectronics. [12][13][14] However, in order to successfully integrate onedimensional semiconductors into useful devices, ordered architectures of aligned nanowires are required. Using templates such as anodized aluminium oxide (AAO) [15,16] or mesoporous materials [17,18] as hosts for nanowires offers a viable method for forming high-density arrays of ordered, crystalline nanowires. Significantly, AAO membranes with ordered and highly oriented pore structures have recently been synthesized on silicon substrates, [19,20] which is very promising for the integration of such materials into current complementary metal oxide semiconductor technologies. At University College Cork we have developed supercritical-fluid-inclusion phase methods for forming semiconductor [21][22][23] and metal/ semiconductor core/shell [24] nanowires and nanotubes within the pores of mesoporous matrices and AAO membranes.Supercritical-fluid-inclusion methods are ideal solvents for forming high-density arrays of nanowires within AAO templates as they do not suffer from the inherent problem of pore blocking associated with other methods, such as electrodeposition and incipient wetness techniques. The electrical conductivity and photoluminescence properties of semiconductor nanowire arrays have been investigated by several research groups. [25][26][27][28] However, photoconductivity measurements on ordered semiconducting nanowire arrayshave not yet been performed. An investigation into the photoconductivity of ordered arrays of nanowires is important in order to fully understand their potential in future photodetection devices, for example, as photoresistors or photodiodes. In this paper, we report the photoconductive properties of germanium nanowire photoresistors with mean diameters of 50 and 100 nm, incorporated within the pores of AAO membranes. A comparative study of the photoresistive properties of germanium nanowire photoresistor arrays with different optically transparent electrodes, namely ultrathin gold films and tin-doped indium tin oxide (ITO) layers, is described in this paper. ITO is a well known n-type semiconductor widely used in the fabrication of transparent electrodes in various optoelectronic devices. [29] To our knowledge, this study is the first analysis of photoconductivity in ordered semicond...

The surface plays an exceptionally important role in nanoscale materials, exerting a strong influence on their properties. Consequently, even a very thin coating can greatly improve optoelectronic properties of nanostructures by modifying the light absorption and spatial distribution of charge carriers. To use these advantages, 1D/1D heterostructures of ZnO/WS 2 core/shell nanowires with a-few-layers thick WS 2 shell were fabricated. These heterostructures were thoroughly characterized by scanning and transmission electron microscopy, X-ray diffraction and Raman spectroscopy. Then, a single-nanowire photoresistive device was assembled by mechanically positioning ZnO/WS 2 core/shell nanowires onto gold electrodes

High-density, ordered arrays of germanium nanowires have been synthesised within the pores of mesoporous thin films (MTFs) and anodized aluminium oxide (AAO) matrices using a supercritical fluid solution-phase inclusion technique. Conductive atomic force microscopy (C-AFM) was utilised to study the electrical properties of the nanowires within these arrays. Nearly all of the semiconductor nanowires contained within the AAO substrates were found to be conducting. Additionally, each individual nanowire within the substrate possessed similar electrical properties demonstrating that the nanowires are continuous and reproducible within each pore. C-AFM was also able to probe the conductance of individual nanowires, 3-4 nm in diameter, within the MTF templates. The ability to synthesise ordered arrays of semiconducting nanowires is a key step in future bottom-up fabrication of multilayered device architectures for potential nanoelectronic and optoelectronic devices.