Articles you may be interested inMechanical stress effects on Pb(Zr,Ti)O3 thin-film ferroelectric capacitors embedded in a standard complementary metal-oxide-semiconductor process Appl. Phys. Lett.Constant-phase-element (CPE) modeling of ferroelectric random-access memory lead zirconate-titanate (PZT) capacitorsWith the circuits using metal-ferroelectric-metal ͑MFM͒ capacitor, rf operational signal properties are almost the same or superior to those of polysilicon-insulator-polysilicon, metal-insulator-metal, and metal-oxide-semiconductor ͑MOS͒ capacitors. In electronic product code global class-1 generation-2 uhf radio-frequency identification ͑RFID͒ protocols, the MFM can play a crucial role in satisfying the specifications of the inventoried flag's persistence times ͑T pt ͒ for each session ͑S0-S3, SL͒. In this paper, we propose and design a new MFM capacitor based memory scheme of which persistence time for S1 flag is measured at 2.2 s as well as indefinite for S2, S3, and SL flags during the period of power-on. A ferroelectric random access memory embedded RFID tag chip is fabricated with an industry-standard complementary MOS process. The chip size is around 500 ϫ 500 m 2 and the measured power consumption is about 10 W.
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