We investigated the atomic geometry, electronic band structure, and optical absorption of nitrogen hyperdoped silicon based on first-principles calculations. The results show that all the paired nitrogen defects we studied do not introduce intermediate band, while most of single nitrogen defects can introduce intermediate band in the gap. Considering the stability of the single defects and the rapid resolidification following the laser melting process in our sample preparation method, we conclude that the substitutional nitrogen defect, whose fraction was tiny and could be neglected before, should have considerable fraction in the hyperdoped silicon and results in the visible sub-band-gap absorption as observed in the experiment. Furthermore, our calculations show that the substitutional nitrogen defect has good stability, which could be one of the reasons why the sub-band-gap absorptance remains almost unchanged after annealing.

A series of fundamental properties from atomic geometry, electronic band structure, optical absorption, to dynamics are systemically studied for the silicon doped with supersaturated chalcogens (S, Se, and Te). The atomic structures in a broad energy range are obtained and distinguished as three classes named the substitutional, interstitial, and quasi-substitutional. Their relative energies varying with the S, Se, and Te samples reveal that the concentration of impurity atoms occupying the substitutional position, which plays an important role in optical absorption, will be different and get progressively higher from S-, Se-, to Te-hyperdoped silicon. Electronic band structures show that for the most atomic geometries the defect-related states do appear into the gap of silicon, and the optical absorption calculations clarify that they are the very origin of the broadband absorption of chalcogen-hyperdoped silicon. Combining the optical absorption properties with the structural transformation from molecular-dynamics simulations, we disclose the micromechanism of annealing-induced reduction of infrared absorptance. Furthermore, we conclude that both the different concentrations of the substitutional doping and structural transformation will lead to the different annealing-induced reduction of infrared absorptance for S-, Se-, and Te-hyperdoped silicon as observed in experiments.

We present a new approach to optical coherence elastography (OCE), which probes the local elastic properties of tissue by using optical coherence tomography to measure the effect of an applied stimulus in the audio frequency range. We describe the approach, based on analysis of the Bessel frequency spectrum of the interferometric signal detected from scatterers undergoing periodic motion in response to an applied stimulus. We present quantitative results of sub-micron excitation at 820 Hz in a layered phantom and the first such measurements in human skin in vivo.

The key problem of statistical physics standing over one hundred years is how to exactly calculate the partition function (or free energy), which severely hinders the theory to be applied to predict the thermodynamic properties of condensed matters. Very recently, we developed a direct integral approach (DIA) to the solutions and achieved ultrahigh computational efficiency and precision. In the present work, the background and the limitations of DIA were examined in details, and another method with the same efficiency was established to overcome the shortage of DIA for condensed system with lower density. The two methods were demonstrated with empirical potentials for solid and liquid cooper, solid argon and C60 molecules by comparing the derived internal energy or pressure with the results of vast molecular dynamics simulations, showing that the precision is about ten times higher than previous methods in a temperature range up to melting point. The ultrahigh efficiency enables the two methods to be performed with ab initio calculations and the experimental equation of state of solid copper up to ∼600 GPa was well reproduced, for the first time, from the partition function via density functional theory implemented.

Deposition of atoms or molecules on a solid surface is a flexible way to prepare various novel two-dimensional materials if the growth conditions, such as suitable surface and optimum temperature, could be predicted theoretically. However, prediction challenges modern theory of material design because the free energy criteria can hardly be applied to this issue due to the long-standing problem in statistical physics of the calculations of the free energy. Herein, we present an approach to the problem by the demonstrations of graphene and γ-graphyne on the surface of copper crystal, as well as silicene on a silver substrate. Compared with previous state-of-the-art algorithms for calculations of the free energy, our approach is capable of achieving computational precisions at least 10-times higher, which was confirmed by molecular dynamics simulations, and working at least four orders of magnitude faster, which enables us to obtain free energy based on ab initio calculations of the interaction potential instead of the empirical one. The approach was applied to predict the optimum conditions for silicene growth on different surfaces of solid silver based on density functional theory, and the results are in good agreement with previous experimental observations.