Band gap opening and engineering is one of the high priority goals in the development of graphene electronics. Here, we report on the opening and scaling of band gap in BN doped graphene (BNG) films grown by low-pressure chemical vapor deposition method. High resolution transmission electron microscopy is employed to resolve the graphene and h-BN domain formation in great detail. X-ray photoelectron, micro-Raman, and UV-vis spectroscopy studies revealed a distinct structural and phase evolution in BNG films at low BN concentration. Synchrotron radiation based XAS-XES measurements concluded a gap opening in BNG films, which is also confirmed by field effect transistor measurements. For the first time, a significant band gap as high as 600 meV is observed for low BN concentrations and is attributed to the opening of the π-π* band gap of graphene due to isoelectronic BN doping. As-grown films exhibit structural evolution from homogeneously dispersed small BN clusters to large sized BN domains with embedded diminutive graphene domains. The evolution is described in terms of competitive growth among h-BN and graphene domains with increasing BN concentration. The present results pave way for the development of band gap engineered BN doped graphene-based devices.
In perpendicularly magnetized Pd/Co/Pd trilayers, the hydrogenation not only increased Kerr signal but also significantly enhanced the magnetic coercivity (HC) by 17%. The reversibility was demonstrated by cyclic H2 exposure. The time constants of hydrogen absorption and desorption effect on HC range from tens to hundreds seconds, depending on the H2 gas pressure. The magneto-optical Kerr signal and magnetic coercivity was simultaneously recorded during H2 absorption and desorption. These multifarious signals respond differently and provide a detailed understanding of hydrogenation effect on the functional Pd/Co/Pd trilayers.
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