Highly oriented boron carbonitride (BCN) nanostructures consisting of nanotubes and nanofibers have been synthesized by bias-assisted hot-filament chemical vapor deposition from the source gases of B2H6, CH4, N2, and H2. It is found that the B concentration of the BCN nanostructures increases with increasing B2H6 in the gas mixture, and the highest B concentration is 45 at. %. Photoluminescence spectrum shows that the BCN nanostructures, identified as B0.34C0.42N0.24, are semiconductors with a band gap energy of around 1.0 eV.

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