We propose here a new method in X-ray nanolithography. Using this method, two-dimensional patterns with a linewidth of 25 nm can be formed. A conventional proximity X-ray lithography system is applicable to the method with a practical gap of approximately 8 µm. A 2X mask is used in the method instead of a 1X mask, changing the mask-wafer position (not gap) during exposure. The mask forms multispot images on the wafer; thus the traces of the relative change of the mask-wafer position during exposure ('dynamic exposure') produce a periodic pattern. The image formability and operational productivity for three kinds of 2X masks proposed for application to this method are described.
Laser-induced autoionisation is discussed in the simple model in which the autoionising level is embedded in several atomic continua. The coupling to the second continuum can drastically diminish the characteristic narrowing in the photoelectron spectra near the Confluence of coherences point. The results seem to be important for possible experimental verification of this narrowing, as in the real atom such coupling is hardly avoidable. The similarity of the effects caused by the spontaneous emission and by the coupling to the second continuum is pointed out.
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