Theoretical Exploration of Observed V-B Transitions between Magnetron Discharge and Anode-Obstructed Hollow-Cathode Discharge Mode

Abstract

We propose here a new method in X-ray nanolithography. Using this method, two-dimensional patterns with a linewidth of 25 nm can be formed. A conventional proximity X-ray lithography system is applicable to the method with a practical gap of approximately 8 µm. A 2X mask is used in the method instead of a 1X mask, changing the mask-wafer position (not gap) during exposure. The mask forms multispot images on the wafer; thus the traces of the relative change of the mask-wafer position during exposure ('dynamic exposure') produce a periodic pattern. The image formability and operational productivity for three kinds of 2X masks proposed for application to this method are described.