The terahertz (THz) frequency range is incredibly important as it covers electromagnetic emissions typical for biological and molecular processes. All molecules emit THz waves in a unique fingerprint pattern, although the intensity of such signals is usually too weak to be detected. To address the efficiency gap in existing THz devices it is extremely important to create surfaces with perfect anti-reflection properties. Although metals are absolutely reflective, here we show both theoretically and experimentally that by constructing meta-surfaces made of a superposition of ultra-thin metallic nano-films (a couple of nanometres thick) and oxide layers a unique property of perfect transmission and impedance matching may be realised. The perfect transmission rates can be as high as 100% and it may be achieved in both optical and THz regimes. The predicted effect has been observed for numerous meta-surfaces of different compositions. The effect found here is expected to impact the renewable energies sectors, optoelectronic and telecommunication industries, accelerating the arrival of the sensors for the new 6G-technology. The phenomenon is highly relevant to all scientific fields where minimising electromagnetic losses through reflection is important.
We have fabricated α-Sn/Ge quantum well heterostructures by sandwiching nano-films of α-Sn between Ge nanolayers. The samples were grown via e-beam deposition and characterized by Raman spectroscopy, atomic force microscopy, temperature dependence of electrical resistivity and THz time-resolved spectroscopy. We have established the presence of α-Sn phase in the polycrystalline layers together with a high electron mobility μ = 2500 ± 100 cm2 V−1 s−1. Here, the temperature behavior of the resistivity in a magnetic field is distinct from the semiconducting films and three-dimensional Dirac semimetals, which is consistent with the presence of linear two-dimensional electronic dispersion arising from the mutually inverted band structure at the α-Sn/Ge interface. As a result, the α-Sn/Ge interfaces of the quantum wells have topologically non-trivial electronic states. From THz time-resolved spectroscopy, we have discovered unusual photocurrent and THz radiation generation. The mechanisms for this process are significantly different from ambipolar diffusion currents that are responsible for THz generation in semiconducting thin films, e.g., Ge. Moreover, the THz generation in α-Sn/Ge quantum wells is almost an order of magnitude greater than that found in Ge. The substantial strength of the THz radiation emission and its polarization dependence may be explained by the photon drag current. The large amplitude of this current is a clear signature of the formation of conducting channels with high electron mobility, which are topologically protected.
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