Electrical resistance is always related to the electronic structure of metallic glass and sensitive to structural changes, which provides a more intuitive approach to investigate structure evolution of metallic glasses upon structural relaxation. Electrical resistance relaxation of the La55Al25Ni10Cu10 bulk metallic glass was studied using the standard four-probe method. The electrical resistance of La55Al25Ni10Cu10 bulk metallic glass decreases significantly with the structural relaxation below the glass transition temperature at 445 K. During the subsequent continuous heating, the relaxed specimen shows a reduction in the resistivity decrease at the glass transition. The relaxed electrical resistance caused by the structural relaxation during the isothermal measurement equals the changes of the electrical resistance reduction in the glass transition region in the subsequent isochronal measurements. The calculated relaxed electrical resistance as a function of the annealing time can be fitted by Kohlrausche-Williams-Watts (KWW) equation. The equilibrium value, time constant and the stretched exponent for the isochronal electrical resistance measurements at 445 K are 0.0384, 2390s and 0.66, respectively. The in-situ electrical resistance data recorded in the isothermal annealing process show the same relaxation behavior with fitting parameters 0.0362, 2033 s, and 0.74, respectively.
In this paper a special At.f (Acidthiobacillus ferrooxidans) modified carbon powder microelectrode was prepared, and a series of electrochemical measurements were conducted to study ferrous ion Fe2 + oxidation mechanism on the electrode. CV (cyclic voltammetry) studies show that this oxidation reaction is reversible when c (Fe2 +) is lower than 0.16mol/L. At higher speed scanning, the currents through the electrode include two parts of the micro disc current and the thin layer current, while at lower speed scanning of steady state process the current provided by thin layer could be ignored, the whole oxidation reaction was controlled by diffusion process, and the calculated diffusion coefficient D0 is about 6. 25 ×10 - 6cm2.s – 1. The transient potential stair step studies also have been conducted. The results are consistence with steady state ones although thin layer currents should be taken in to account.
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