With low toxicity and high abundance of silicon, silicon nanocrystal (Si-NC) based white light-emitting device (WLED) is expected to be an alternative promising choice for general lighting in a cost-effective and environmentally friendly manner. Therefore, an all-inorganic Si-NC based WLED was reported for the first time in this paper. The active layer was made by mixing freestanding Si-NCs with hydrogen silsesquioxane (HSQ), followed by annealing and preparing the carrier transport layer and electrodes to complete the fabrication of an LED. Under forward biased condition, the electroluminescence (EL) spectrum of the LED showed a broadband spectrum. It was attributed to the mechanism of differential passivation of Si-NCs. The performance of LED could be optimized by modifying the annealing temperature and ratio of Si-NCs to HSQ in the active layer. The external quantum efficiency (EQE) peak of the Si WLED was 1.0% with a corresponding luminance of 225.8 cd/m2, and the onset voltage of the WLED was 2.9V. The chromaticity of the WLED indicated a warm white light emission.
Hybrid metal halide perovskite–based light‐emitting diodes and lasers have demonstrated outstanding performance and currently lead a new trend in the optoelectronic field; however, the widely used one‐step spin‐coating method assisted by an antisolvent suffers from the narrow processing window of antisolvents, which limits its further use in commercial applications. The present work incorporates trivalent‐neodymium ions (Nd3+) into methylammonium lead tribromide (MAPbBr3) perovskite thin films to control nucleation and crystal growth, achieving an ultrabroad processing window of 18 s, significantly larger than the conventional processing window of 3–5 s. A sixfold enhanced photoluminescence quantum yield (PLQY) and an excellent stability of at least 8 months in ambient conditions is also demonstrated. The results provide a deeper understanding of the nucleation and growth process of ion‐incorporated perovskites and demonstrate an effective strategy to overcome the narrow processing window limit.
Pressure and temperature are powerful tools applied to perovskites to achieve recrystallization. Lamination, based on recrystallization of perovskites, avoids the limitations and improves the compatibility of materials and solvents in perovskite device architectures. In this work, we demonstrate tightly compacted perovskite laminates on flexible substrates via hot-pressing and investigate the effect of hot-pressing conditions on the lamination qualities and optical properties of perovskite laminates. The optimized laminates achieved at a temperature of 90 °C and a pressure of 10 MPa could sustain a horizontal pulling pressure of 636 kPa and a vertical pulling pressure of 71 kPa. Perovskite laminates exhibit increased crystallinity and a crystallization orientation preference to the (100) direction. The optical properties of laminated perovskites are almost identical to those of pristine perovskites, and the photoluminescence quantum yield (PLQY) survives the negative impact of thermal degradation. This work demonstrates a promising approach to physically laminating perovskite films, which may accelerate the development of roll-to-roll printed perovskite devices and perovskite tandem architectures in the future.
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