This article designs a low‐phase noise 8.22 GHz GaN high electron‐mobility transistor (HEMT) oscillator in the WIN 0.25 μm GaN HEMT process. The oscillator uses a HEMT amplifier with a transformer as the feedback network. The transformer uses a 3‐path secondary inductor and a single‐path primary inductor. The GaN oscillator consumes the power 4.328 mW and generates a signal at 8.22 GHz with an output power −11.35 dBm. At 1 MHz frequency offset from the carrier at 8.22 GHz the phase noise is −120.82 dBc/Hz, the figure of merit of the proposed oscillator is −192.76 dBc/Hz. The oscillator chip occupies an area of 2 × 1 mm2.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.