Green tea manufacture was standardized with respect to the inactivation of polyphenol oxidase (PPO), rolling, and drying for quality manufacture. Inactivation of PPO by parching, steaming, microwave heating, and oven heating was monitored in tea shoots. The inactivated shoots were rolled under regimens of high and low pressures and dried by microwave heating, oven heating, or sun-drying; total phenols and catechins were estimated. Parched and sun-dried teas contained the lowest levels of total phenols and catechins, and their infusions were dull in color with a slightly burnt odor. Microwave-inactivated and-dried teas showed the highest levels of total phenols and catechins, and their infusions were bright in color and sweet in taste with a subtle pleasant odor. In steam-inactivated and oven/microwave-dried teas, total phenol and catechin contents were intermediate between parched and sun-dried teas and microwave-inactivated and microwave-dried teas, and their infusions were bright with a umami taste.
We report a low-temperature magneto transport study of Bi2Se3 thin films of different thicknesses (40, 80 and 160 nm), deposited on sapphire (0001) substrates, using radio frequency magnetron sputtering technique. The high-resolution x-ray diffraction measurements revealed the growth of rhombohedral c-axis {0003n} oriented Bi2Se3 films on sapphire (0001). Vibrational modes of Bi2Se3 thin films were obtained in the low wavenumber region using Raman spectroscopy. The surface roughness of sputtered Bi2Se3 thin films on sapphire (0001) substrates were obtained to be ~ 2.26–6.45 nm. The chemical and electronic state of the deposited Bi2Se3 was confirmed by X-ray photoelectron spectroscopy and it showed the formation of Bi2Se3 compound. Resistivity versus temperature measurements show the metallic nature of Bi2Se3 films and a slight up-turn transition in resistivity at lower temperatures < 25 K. The positive magneto-resistance value of Bi2Se3 films measured at low temperatures (2–100 K) confirmed the gapless topological surface states in Bi2Se3 thin films. The quantum correction to the magnetoconductivity of thin films in low magnetic field is done by employing Hikami–Larkin–Nagaoka theory and the calculated value of coefficient ‘α’ (defining number of conduction channels) was found to be 0.65, 0.83 and 1.56 for film thickness of 40, 80 and 160 nm, respectively. These observations indicate that the top and bottom surface states are coupled with the bulk states and the conduction mechanism in Bi2Se3 thin films varied with the film thicknesses.
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