Structural, Electronic and Thermoelectric Properties of Bi2Se3 Thin Films Deposited by RF Magnetron Sputtering

Gautam, Sudhanshu; Verma, Ajay Kumar; Balapure, Aniket; Singh, Bheem; Ganesan, Ramakrishnan; Kumar, Mahesh; Singh, Vidya Nand; Gahtori, Bhasker; Kushvaha, S. S.

doi:10.1007/s11664-022-09498-7

Cited by 24 publications

(17 citation statements)

References 45 publications

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“…53 The opposite kind of peak shift in Bi and Se demonstrates the formation of the Bi−Se bond in the deposited film. 45,52 Figure 3a The peaks at 2θ values 24.9, 29.1, 35.9, 44.3, 48.1, 52.4, and 65.3°can be assigned to the (301), (040), (411), (314), (251), (610), and (522) Sb 2 Se 3 lattice planes, respectively (JCPDS number: 00-015-0861). 56,57 The other XRD peaks of the Mo foil are indexed in a manner similar to Figure 1d.…”

Section: Resultsmentioning

confidence: 99%

“…The Raman spectrum of Bi 2 Se 3 on the Mo foil shows Raman peaks located at 73.6 (A 1g 1 ), 133.0 (E g 2 ), and 175.5 (A 1g 2 ) cm –1 as shown in Figure c. The A 1g 1 and A 1g 2 peaks are attributed to the out-of-plane vibrational mode, while the E g 2 peak corresponds to the in-plane vibrational Raman mode, and all the peaks correspond to the rhombohedral phase of Bi 2 Se 3 . , To investigate the crystal structure of Bi 2 Se 3 on the Mo foil, XRD was performed, and the data is presented in Figure d. The three peaks at 2θ values of 40.1, 58.7, and 73.6° correspond to the (110), (200), and (211) planes, respectively, of a pure Mo foil .…”

Section: Resultsmentioning

confidence: 99%

“…A commercial Bi 2 Se 3 (ACI Alloys, 99.99% pure) sputtering target was used as the sputtering source. A growth pressure of ∼3.3 × 10 –3 mbar was maintained using ultra-high-pure Ar (99.9999%) gas during the deposition process. , The radio frequency (RF) forward power and the substrate temperature during depositions were kept at 10 W and 400 °C, respectively. After the deposition of thin films, we performed a post-selenization process in a Se-rich environment at 300–350 °C to obtain good stoichiometry of films.…”

Section: Methodsmentioning

confidence: 99%

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Heterojunction Bi₂Se₃/Sb₂Se₃ on Flexible Mo Metal Foils for Photoelectrochemical Water Splitting Applications

Singh,

Gautam,

Aggarwal

et al. 2023

ACS Appl. Electron. Mater.

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Nanostructured heterojunctions are an effective approach to enhance the photoelectrochemical (PEC) performance of semiconducting materials, as they facilitate the separation of the photogenerated charge carriers. Here, we report the PEC properties of the Bi 2 Se 3 /Sb 2 Se 3 heterojunction structure on a thin flexible Mo metal foil. Raman spectroscopy confirmed the structural composition of Bi 2 Se 3 and Sb 2 Se 3 with their corresponding vibrational modes. X-ray diffraction showed a rhombohedral crystal structure for Bi 2 Se 3 and an orthorhombic crystal structure for Sb 2 Se 3 on polycrystalline substrates. X-ray photoelectron spectroscopy further revealed the formation of Bi 2 Se 3 and Sb 2 Se 3 compounds corresponding to their chemical and electronic states. PEC measurements were carried out under 100 mW/cm 2 (AM 1.5G) simulated solar radiation in a 0.5 M Na 2 SO 4 aqueous electrolyte solution and demonstrated an enhancement in photocurrent density from the Bi 2 Se 3 /Sb 2 Se 3 heterojunction (127.6 μA/cm 2 ) attributed to more active sites and easy separation of photogenerated charges in comparison to bare Bi 2 Se 3 (7.5 μA/cm 2 ) and Sb 2 Se 3 (76.5 μA/cm 2 ) thin films at 0.9 V vs RHE. This preliminary study on thin metal foil-based photoelectrodes paves the way toward the futuristic production of large-area PEC water-splitting applications.

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Section: Methodsmentioning

confidence: 99%

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Heterojunction Bi₂Se₃/Sb₂Se₃ on Flexible Mo Metal Foils for Photoelectrochemical Water Splitting Applications

Singh,

Gautam,

Aggarwal

et al. 2023

ACS Appl. Electron. Mater.

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“…Figure a shows the core-level scan of Bi 4f of the Bi 2 Se 3 /n-GaN hybrid structure where the two spin–orbital-coupled Bi (4f 7/2 , 4f 5/2 ) peaks are deconvoluted using a Voigt (mixed Lorentzian–Gaussian) function to Bi–Se, Bi–O, and Bi–Bi peaks, respectively. ,− Figure b shows the Se 3d narrow scan where, in addition to the deconvoluted spin–orbit-coupled Se 3d 3/2 and 3d 5/2 peaks, a feeble Se–O bond peak corresponding to both Se 3d 3/2 and 3d 5/2 peaks was also observed . The binding energy positions corresponding to each peak are given in Table .…”

Section: Resultsmentioning

confidence: 99%

Topological Bi₂Se₃/n-GaN Hybrid Structure for Enhanced and Self-Powered UV Photodetectors

Kumar

Aggarwal

Yadav

et al. 2023

ACS Appl. Electron. Mater.

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Recent progress in topological insulating materials predicts a promising future for their applications in developing innovative quantum, electronic, and optoelectronic devices. The integration of topological insulators with technologically important semiconductors can open up different ways to build high-efficiency devices. Here, we have fabricated topological insulator Bi2Se3/GaN hybrid structure-based photodetectors (PDs) and studied their photoresponse characteristics in the ultraviolet (UV) region. Raman and high-resolution X-ray diffraction spectroscopy measurements revealed the formation of the c-axis-oriented rhombohedral crystal structure of the Bi2Se3 film. X-ray photoelectron spectroscopy studies disclosed the formation of a stoichiometric Bi2Se3 thin film on n-GaN. The Bi2Se3 thin film with the magnetotransport property exhibits a metallic nature with an upturn in resistivity below 20 K which possesses a weak antilocalization effect under an applied magnetic field, confirming the topological insulating behavior. Further, we have fabricated metal–semiconductor–metal-type PD devices on the hybrid structure of Bi2Se3/n-GaN, Bi2Se3/n-GaN junction, and pristine n-GaN. The photoresponse measurements have been performed using a UV (355 nm) light source by varying the laser power (1–15 mW) and the external bias (0–5 V). The calculated value of photoresponsivity of the PD devices on the Bi2Se3/n-GaN hybrid structure is found to be seven-fold higher than that of pristine-GaN. Further, it is observed that devices consisting of a Bi2Se3 film and GaN show self-powered UV PD characteristic nature. This study adds a significant step to enhance the performance of UV PDs based on large-area GaN templates by several folds with the help of topological Bi2Se3/GaN hybrid structures.

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“…Thus, the binding energy plays a crucial role in shifting the Raman modes. [ 32–34 ] Moreover, in the case of SiO 2 , there are three intrinsic Raman modes of bismuth selenide at 70.8, 128, and 174.2 cm −1 , while there is another Raman mode observed at 252 cm −1 . This particular mode at 252 cm −1 is due to selenium–selenium interaction and is known as H‐mode.…”

Section: Resultsmentioning

confidence: 99%

Revealing the Substrate Dependent Ultrafast Phonon Dynamics in Bi₂Se₃ Thin Films

Saini

Tailor

Sharma

et al. 2022

Adv Materials Inter

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The bulk carrier excitation influences the phonon dynamics, which can alter and modulate the surface charge density of topological insulators such as bismuth selenide (Bi2Se3). This work investigates the charge carrier and phonon dynamics in Bi2Se3 grown on various substrates. The orientation of the substrate, the size of the crystallites, and the misfit of the lattice affect the carrier and phonon dynamics. Bi2Se3 thin films are grown under the same growth conditions on SiO2, Si(111), and SiN. Bi2Se3 overlayers exhibit substrate‐dependent charge carrier relaxation channels and phonon dynamics. It is evident from Raman spectroscopy and ultrafast transient absorption spectroscopy that the heterointerface interactions of all three samples affect the vibration modes of Bi2Se3 and coherent acoustic phonon oscillations in the NIR range. At 13.6, 41.2, and 34.4 GHz, the vibration modes of SiO2, Si(111), and SiN are equivalent. The propagation depth of phonon waves is shown by measuring the speed of sound in Bi2Se3 overlayers on SiO2, Si(111), and SiN. This study demonstrates that the surface and bulk‐bound charge carriers of a topological insulator determine the frequency and velocity of the generated sound.

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Structural, Electronic and Thermoelectric Properties of Bi2Se3 Thin Films Deposited by RF Magnetron Sputtering

Cited by 24 publications

References 45 publications

Heterojunction Bi₂Se₃/Sb₂Se₃ on Flexible Mo Metal Foils for Photoelectrochemical Water Splitting Applications

Heterojunction Bi₂Se₃/Sb₂Se₃ on Flexible Mo Metal Foils for Photoelectrochemical Water Splitting Applications

Topological Bi₂Se₃/n-GaN Hybrid Structure for Enhanced and Self-Powered UV Photodetectors

Revealing the Substrate Dependent Ultrafast Phonon Dynamics in Bi₂Se₃ Thin Films

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Structural, Electronic and Thermoelectric Properties of Bi2Se3 Thin Films Deposited by RF Magnetron Sputtering

Cited by 24 publications

References 45 publications

Heterojunction Bi2Se3/Sb2Se3 on Flexible Mo Metal Foils for Photoelectrochemical Water Splitting Applications

Heterojunction Bi2Se3/Sb2Se3 on Flexible Mo Metal Foils for Photoelectrochemical Water Splitting Applications

Topological Bi2Se3/n-GaN Hybrid Structure for Enhanced and Self-Powered UV Photodetectors

Revealing the Substrate Dependent Ultrafast Phonon Dynamics in Bi2Se3 Thin Films

Contact Info

Product

Resources

About

Heterojunction Bi₂Se₃/Sb₂Se₃ on Flexible Mo Metal Foils for Photoelectrochemical Water Splitting Applications

Heterojunction Bi₂Se₃/Sb₂Se₃ on Flexible Mo Metal Foils for Photoelectrochemical Water Splitting Applications

Topological Bi₂Se₃/n-GaN Hybrid Structure for Enhanced and Self-Powered UV Photodetectors

Revealing the Substrate Dependent Ultrafast Phonon Dynamics in Bi₂Se₃ Thin Films