At the atomic-cluster scale, pure boron is markedly similar to carbon, forming simple planar molecules and cage-like fullerenes.Theoretical studies predict that two-dimensional (2D) boron sheets will adopt an atomic configuration similar to that of boron atomic clusters. We synthesized atomically thin, crystalline 2D boron sheets (i.e., borophene) on silver surfaces under ultrahigh-vacuum conditions. Atomic-scale characterization, supported by theoretical calculations, revealed structures reminiscent of fused boron clusters with multiple scales of anisotropic, out-of-plane buckling. Unlike bulk boron allotropes, borophene shows metallic characteristics that are consistent with predictions of a highly anisotropic, 2D metal.

Three-dimensional (3D) mesostructured semiconductors show promising properties and applications; however, to date, few methods exist to synthesize or fabricate such materials. Metal can diffuse along semiconductor surfaces, and even trace amounts can change the surface behavior. We exploited the phenomena for 3D mesoscale lithography, by showing one example where iterated deposition-diffusion-incorporation of gold over silicon nanowires forms etchant-resistant patterns. This process is facet-selective, producing mesostructured silicon spicules with skeletonlike morphology, 3D tectonic motifs, and reduced symmetries. Atom-probe tomography, coupled with other quantitative measurements, indicates the existence and the role of individual gold atoms in forming 3D lithographic resists. Compared to other more uniform silicon structures, the anisotropic spicule requires greater force for detachment from collagen hydrogels, suggesting enhanced interfacial interactions at the mesoscale.

Nanosphere lithography (NSL) is combined with reactive ion etching (RIE) to fabricate ordered arrays of in-plane, triangular cross-section nanopores. Nanopores with in-plane widths ranging from 44 to 404 nm and depths ranging from 25 to 250 nm are demonstrated. The combination of angle-resolved nanosphere lithography (AR NSL) and RIE yields an additional three-fold reduction in nanopore size.

We demonstrate a facile approach for site-specific fabrication of organic, inorganic, and hybrid solid-state nanostructures through a novel combination of electron-beam lithography (eBL) and spin coating of liquid and sol-gel precursors, termed soft eBL. By using eBL patterned resists as masks in combination with a low cost process such as spin coating, directed growth of nanostructures with controlled dimensions is achieved without the need for the costly and difficult process step of etching ceramics. The highly versatile nature of the scheme is highlighted through the fabrication of nanostructures of a variety of materials such as ferroelectric, optoelectronic, and conducting polymeric materials at different length scales and spatial densities on a multitude of substrates.

A symmetric micro-supercapacitor is constructed by electrochemically depositing manganese oxide onto micro-patterned current collectors. High surface-to-volume ratio of manganese oxide and short diffusion distance between electrodes give an ultra-high areal capacitance of 56.3 mF cm(-2) at a current density of 27.2 μA cm(-2).