A low cost nanosphere lithography method for patterning and generation of semiconductor
nanostructures provides a potential alternative to the conventional top-down fabrication
techniques. Forests of silicon pillars of sub-500 nm diameter and with an aspect ratio up
to 10 were fabricated using a combination of the nanosphere lithography and
deep reactive ion etching techniques. The nanosphere etch mask coated silicon
substrates were etched using oxygen plasma and a time-multiplexed ‘Bosch’ process to
produce nanopillars of different length, diameter and separation. Scanning electron
microscopy data indicate that the silicon etch rates with the nanoscale etch masks
decrease linearly with increasing aspect ratio of the resulting etch structures.