A comparison down to sub-100-fW optical power level was carried out between a lownoise Silicon photodiode and a low optical flux measurement facility based on a double attenuator technique. The comparison was carried out via a silicon single-photon avalanche diode (Si-SPAD), which acted as transfer standard. The measurements were performed at a wavelength of 770 nm using an attenuated laser as a radiation source at optical power levels between approximately 86 fW and approximately 1325 fW, corresponding to approximately 330 000 photons s −1 and approximately 5.2 × 10 6 photons s −1 , respectively. The mean relative deviation of the detection efficiencies of the Si-SPAD, determined by the Si-photodiode and the low optical flux measurement facility, i.e. between two completely independent traceability routes, was < 0.2%, thus well within the combined standard uncertainty of the two measurements. To our knowledge, this is the first comparison for the detection efficiency of a single photon detector using a direct optical flux measurement by a conventional Si-photodiode at such low power levels.
We report on the characterization of the angular-dependent emission of single-photon emitters based on single nitrogen-vacancy (NV-) centers in nanodiamond at room temperature. A theoretical model for the calculation of the angular emission patterns of such an NV-center at a dielectric interface will be presented. For the first time, the orientation of the NV-centers in nanodiamond was determined from back focal plane images of NV-centers and by comparison of the theoretical and experimental angular emission pattern. Furthermore, the orientation of the NV-centers was also obtained from measurements of the fluorescence intensity in dependence on the polarization angle of the linearly polarized excitation laser. The results of these measurements are in good agreement. Moreover, the collection efficiency in this setup was calculated to be higher than 80% using the model of the angular emission of the NV-centers.
BackgroundSilicon single-photon avalanche diodes (Si-SPADs) are the most used devices for measuring ultra-weak optical radiant fluxes in many quantum technology fields, such as quantum optics, quantum communication, quantum computing, etc. In all these fields, the detection efficiency is the main parameter, which has to be accurately known for achieving reliable measurements. In this paper we present the improvements performed on the setup described in López et al. (J Mod Opt 62:S21–S27, 2015) for determining the detection efficiency of Si-SPAD detectors with a low measurement uncertainty. The improvement arises from the precise alignment of the Si-SPAD detector and the low deviation reached between the total calculated filter transmission and the individual filter transmission measurements (≤0.05%) performed with an integrating sphere with attached Si-photodiode as standard detector.Results The relative standard uncertainty of the Si-SPAD detection efficiency measurement achieved is now as low as ~0.16%. Furthermore, the investigation of the detection efficiency homogeneity of two commercial Si-SPAD detectors from different manufacturers and with different sensor diameters is also presented. The obtained homogeneity is ≤2.2% within a region of diameter of 40 μm.ConclusionsThe detailed analysis presented in this paper shows the potential for achieving low measurement uncertainties for Si-SPAD detector calibration even in the low photon flux range. The low uncertainties are only to be realized for reproducible measurement conditions, i.e. in specific for equal beam sizes and beam shapes and well as for an irradiation of equal active areas of the detector. This, however, will be difficult to obtain when measurements are performed at different national metrology institutes.
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