Combining different materials into desired superlattice structures can produce new electronic states at the interface and the opportunity to create artificial materials with novel properties. Here we introduce a new, rather unexpected, and yet simple way to such a superlattice assembly of perovskite oxides: in the Dion-Jacobson phase, a model system of layered perovskites, high-quality bicolor perovskite superlattices (LaNb(2)O(7))(nL)(Ca(2)Nb(3)O(10))(nC) are successfully fabricated by a layer-by-layer assembly using two different perovskite nanosheets (LaNb(2)O(7) and Ca(2)Nb(3)O(10)) as a building block. The artificially fabricated (LaNb(2)O(7)/Ca(2)Nb(3)O(10)) superlattices are structurally unique, which is not feasible to create in the bulk form. By such an artificial structuring, we found that (LaNb(2)O(7)/Ca(2)Nb(3)O(10)) superlattices possess a new form of interface coupling, which gives rise to ferroelectricity.

All-nanosheet ultrathin capacitors of Ru0.95O20.2-/Ca2Nb3O10-/Ru0.95O20.2- were successfully assembled through facile room-temperature solution-based processes. As a bottom electrode, conductive Ru0.95O20.2- nanosheets were first assembled on a quartz glass substrate through a sequential adsorption process with polycations. On top of the Ru0.95O20.2- nanosheet film, Ca2Nb3O10- nanosheets were deposited by the Langmuir-Blodgett technique to serve as a dielectric layer. Deposition parameters were optimized for each process to construct a densely packed multilayer structure. The multilayer buildup process was monitored by various characterizations such as atomic force microscopy (AFM), ultraviolet-visible absorption spectra, and X-ray diffraction data, which provided compelling evidence for regular growth of Ru0.95O20.2- and Ca2Nb3O10- nanosheet films with the designed multilayer structures. Finally, an array of circular films (50 μm ϕ) of Ru0.95O20.2- nanosheets was fabricated as top electrodes on the as-deposited nanosheet films by combining the standard photolithography and sequential adsorption processes. Microscopic observations by AFM and cross-sectional transmission electron microscopy, as well as nanoscopic elemental analysis, visualized the sandwich metal-insulator-metal structure of Ru0.95O20.2-/Ca2Nb3O10-/Ru0.95O20.2- with a total thickness less than 30 nm. Electrical measurements indicate that the system really works as an ultrathin capacitor, achieving a capacitance density of ∼27.5 μF cm(-2), which is far superior to currently available commercial capacitor devices. This work demonstrates the great potential of functional oxide nanosheets as components for nanoelectronics, thus contributing to the development of next-generation high-performance electronic devices.

An important challenge in current microelectronics research is the development of techniques for making smaller, higher-performance electronic components. In this context, the fabrication and integration of ultrathin high-κ dielectrics with good insulating properties is an important issue. Here, we report on a rational approach to produce high-performance nanodielectrics using one-nanometer-thick oxide nanosheets as a building block. In titano niobate nanosheets (TiNbO 5 , Ti 2 NbO 7 , Ti 5 NbO 14 ), the octahedral distortion inherent to site-engineering by Nb incorporation results in a giant molecular polarizability, and their multilayer nanofi lms exhibit a high dielectric constant (160-320), the largest value seen so far in high-κ nanofi lms with thickness down to 10 nm. Furthermore, these superior high-κ properties are fairly temperature-independent with low leakage-current density ( < 10 − 7 A cm − 2 ). This work may provide a new recipe for designing nanodielectrics desirable for practical high-κ devices.

Complex perovskite oxides offer tremendous potential for controlling their rich variety of electronic properties, including high-T superconductivity, high-κ ferroelectricity, and quantum magnetism. Atomic-scale control of these intriguing properties in ultrathin perovskites is an important challenge for exploring new physics and device functionality at atomic dimensions. Here, we demonstrate atomic-scale engineering of dielectric responses using two-dimensional (2D) homologous perovskite nanosheets (CaNaNbO; m = 3-6). In this homologous 2D material, the thickness of the perovskite layers can be incrementally controlled by changing m, and such atomic layer engineering enhances the high-κ dielectric response and local ferroelectric instability. The end member (m = 6) attains a high dielectric constant of ∼470, which is the highest among all known dielectrics in the ultrathin region (<10 nm). These results provide a new strategy for achieving high-κ ferroelectrics for use in ultrascaled high-density capacitors and post-graphene technology.

RbBiNb2O7 ceramic is synthesized by solid state reaction of stoichiometric quantities of Rb2CO3, Bi2O3, and Nb2O5 (1000 °C, 24 h) and characterized by powder XRD, Raman scattering spectroscopy, and electrical measurements.