Quality of life is a widely accepted concept based on the notion that people’s lives have been subject to rapid development and industrialization. This study aims to explore the impact of different factors on the quality of life of empty nesters in Southwest China. The main factors explored are resilience and social supports (SS), highlighted here from different perspectives. Moreover, the correlations between other variables and quality of life are shown here. This study experimented with a hierarchical multiple regression model from survey data with 3583 valid responses. It argued that both resilience and social supports, including family members and friends, are significantly correlated with the Chinese empty nesters’ quality of life. Family support and friend support play a significant mediating role in the association between resilience and quality of life. However, neither government nor nongovernmental support significantly influences the quality of life. Therefore, the hypothetical recommendations of this study have been partially confirmed. The findings of this study provide a more comprehensive understanding of the overall mental and physical health of Chinese empty nesters.
A novel 4H-SiC trench IGBT with a controllable hole-extracting (CHE) path is proposed and investigated in this paper. The CHE path is controlled by metal semiconductor gate (MES gate) and metal oxide semiconductor gate (MOS gate) in p-shield region. The grounded p-shield region can significantly suppress the high electric field around gate oxide in SiC devices, but it weakens the conductivity modulation in the SiC trench IGBT by rapidly sweeping out holes. This effect can be eliminated by introducing CHE path. The CHE path is pinched off by the high gate bias voltage in on-state to maintain high conductivity modulation and obtain a comparatively low on-state voltage (V
ON). During the turn-off transient, the CHE path is formed, which contributes to a decreased turn-off loss (E
OFF). Based on numerical simulation, the E
OFF of the proposed IGBT is reduced by 89% compared with the conventional IGBT at same V
ON and the V
ON of the proposed IGBT is reduced by 50% compared to the grounded p-shield IGBT at same E
OFF. In addition, the average power reduction for the proposed device can be 51.0 % to 81.7 % and 58.2% to 72.1% with its counterparts at a wide frequency range of 500 Hz to 10 kHz, revealing a great improvement of frequency characteristics.
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