This work reports on the fabrication and characterization of a K9 glass planar waveguide structure. The helium ion implantation was employed to form the waveguide on the K9 glass. The choices of the energy of 0.4 MeV and the dose of [Formula: see text] ions/cm2 were conducted by the SRIM 2013. The [Formula: see text]-line spectroscopy and the modal profile of the He[Formula: see text]-irradiated K9 glass waveguide were performed by the prism-coupling system and the end-face coupling technique at 0.6328 [Formula: see text]m, which suggests the capability of light propagation. The He[Formula: see text]-implanted K9 glass waveguides can serve as potential candidates for advanced integrated optoelectronic devices.
Optical waveguides play a vital role in the manufacture of various optical devices due to their unique performances and high-degree integration. We report on the preparation and characterization of the planar waveguides in the Dy3+/Tm3+-codoped GeS2–Ga2S3–PbI2 chalcohalide glass. The waveguide was formed by the 400 keV H+-ion implantation with a dose of 8 × 1016 ions/cm2. Its thermal stability was studied by annealing at 260°C for 1 h. The changes in the nuclear energy loss with the implantation depth were simulated by the stopping and range of ions in matter (SRIM 2013). The dark-mode characteristics of the waveguide were measured by the prism coupling method. The refractive index distribution of the optical waveguide was reconstructed by the reflectivity calculation method. The modal profile of the waveguide structure was calculated by the finite-difference beam propagation method (FD-BPM). The thermally stable proton-implanted Dy3+/Tm3+-codoped GeS2–Ga2S3–PbI2 chalcohalide glass waveguide is expected to be applied in mid-infrared integrated optical devices.
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