SUMMARY The repertoire of ~1200 odorant receptors (ORs) is mapped onto the array of ~1800 glomeruli in the mouse olfactory bulb (OB). The spatial organization of this array is influenced by the ORs. Here we show that glomerular mapping to broad domains in the dorsal OB is determined by two types of olfactory sensory neurons (OSNs), which reside in the dorsal olfactory epithelium. The OSN types express either Class I or Class II OR genes. Axons from the two OSN types segregate already within the olfactory nerve and form distinct domains of glomeruli in the OB. These class-specific anatomical domains correlate with known functional odorant response domains. However, axonal segregation and domain formation are not determined by the class of the expressed OR protein. Thus, the two OSN types are determinants of axonal wiring, operate at a higher level than ORs, and contribute to the functional organization of the glomerular array.

We present a novel method for the direct metal-free growth of graphene on sapphire that yields high quality films comparable to that of graphene grown on SiC by sublimation. Graphene is synthesized on sapphire via the simple decomposition of methane at 1425-1600 °C. Film quality was found to be a strong function of growth temperature. The thickness, structure, interface characteristics, and electrical transport properties were characterized in order to understand the utility of this material for electronic devices. Graphene synthesized on sapphire is found to be strain relieved, with no evidence of an interfacial buffer layer. There is a strong correlation between the graphene structural quality and carrier mobility. Room temperature Hall effect mobility values were as high as 3000 cm(2)/(V s), while measurements at 2 K reached values of 10,500 cm(2)/(V s). These films also display evidence of the quantum Hall effect. Field effect transistors fabricated from this material had a typical current density of 200 mA/mm and transconductance of 40 mS/mm indicating that material performance may be comparable to graphene on SiC.

No abstract