Growth of thick p-type SiC epitaxial layers by halide chemical vapor deposition

Fanton, Mark A.; Weiland, B.; Redwing, Joan M.

doi:10.1016/j.jcrysgro.2008.06.027

Cited by 24 publications

(52 citation statements)

References 26 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Similar behaviors have been observed for the chloride-based process both at 1300 [19] and 2000 1C [21]. The boron incorporation has also been found to increase with increasing flow of B-precursor both for the standard growth process, using B 2 H 6 [12,13] and for the high-temperature chloride-based growth process using BCl 3 [21].…”

Section: Dopant Flow Dependencesupporting

confidence: 74%

“…However, in all of these investigations the standard precursor mixture with silane and light hydrocarbons has been used. The doping studies done using the chloride-based process are limited to low-temperature growth at 1300 1C using a combination of the chlorinated hydrocarbon chloromethane (CH 3 Cl) and HCl to get a precursor at $1600 1C [20] and high-temperature growth at 2000 1C using the chlorinated silane precursor tetrachlorosilane (SiCl 4 ) and a growth rate of 200 mm/h [21].…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Acceptor incorporation in SiC epilayers grown at high growth rate with chloride-based CVD

Pedersen

Beyer

Henry

et al. 2009

Journal of Crystal Growth

View full text Add to dashboard Cite

a b s t r a c tA systematic p-type doping study has been performed on 4H-and 6H-silicon carbide (SiC) epilayers grown at high growth rate using chloride-based chemical vapor deposition. The effect of temperature, pressure, growth rate, C/Si-, Cl/Si-ratios and dopant flow on the incorporation of the acceptor atoms aluminum and boron has been studied. The C/Si-ratio on the aluminum incorporation has similar behavior to what has been reported for the standard non-chlorinated low growth rate process, while no clear effect of C/Si-ratio was observed for the boron incorporation. A higher Cl/Si-ratio seems to lead to lower the aluminum and boron incorporation either due to more effective silicon supply at high Cl/Siratio or due to removal of dopant atoms from the surface by chlorine. The doping concentration is stable to the variations in silicon molar fraction, growth pressure and growth temperature for the aluminumdoped layers. Also p-type doping with gallium was tested.

show abstract

Section: Dopant Flow Dependencesupporting

confidence: 74%

Section: Introductionmentioning

confidence: 99%

Acceptor incorporation in SiC epilayers grown at high growth rate with chloride-based CVD

Pedersen

Beyer

Henry

et al. 2009

Journal of Crystal Growth

View full text Add to dashboard Cite

show abstract

“…Concerning Ge concentration increase with GeH 4 flux, this is of course a classical trend for the dopants [29,30]. The general trend with temperature (Ge incorporation decrease with temperature increase) is also found for the dopants [22,31].…”

Section: Ge Incorporation Mechanismsupporting

confidence: 55%

Ge incorporation inside 4H-SiC during homoepitaxial growth by chemical vapor deposition

et al. 2014

View full text Add to dashboard Cite

show abstract

“…9 This makes the C/Si ratio in the CVD gas mixture the key parameter for controlling the amount of incorporated dopants. Doping incorporation in a chlorinated chemistry has been studied in detail and it was found that n-type doping by N2 and tertbutylphosphine (TBP: C4H9 PH2) for doping with phosphorus was easily done and not affected by the presence of chlorine, 10 12 where Al doping in the 10 20 cm -3 range was measured by SIMS. 13 Two overall conclusions from the doping studies with a chlorinated chemistry are that the C/Si ratio can still be used to control the doping and that chlorine seems to decrease the incorporation of p-type dopants.…”

Section: Introductionmentioning

confidence: 99%

Incorporation of dopants in epitaxial SiC layers grown with fluorinated CVD chemistry

Stenberg

Janzén

Pedersen

2017

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

View full text Add to dashboard Cite

Fluorinated chemistry in chemical vapor deposition (CVD) of silicon carbide (SiC) with SiF4 as Si precursor has been shown to fully eliminate the formation of silicon clusters in the gas phase, making SiF4 an interesting Si precursor. However, before a fluorinated CVD chemistry can be adopted, the effect of fluorine on the dopant incorporation must be understood since dopant incorporation is of paramount importance in semiconductor manufacturing. Here, the authors present dopant incorporation studies for n-type doping with N using N2 and p-type doping with Al using TMAl in fluorinated CVD of homoepitaxial SiC. The precursors used were SiF4 as Si precursor and the source of F together with CH4 as C precursor. The authors find that it is possible to control the doping in SiC epitaxial layers when using a fluorinated CVD chemistry for both n- and p-type materials using the C/Si ratio as in standard SiC CVD. However, large area doping uniformity seems to be a challenge for a fluorinated CVD chemistry, most likely due to the very strong Si–F and Al–F bonds.

show abstract

Growth of thick p-type SiC epitaxial layers by halide chemical vapor deposition

Cited by 24 publications

References 26 publications

Acceptor incorporation in SiC epilayers grown at high growth rate with chloride-based CVD

Acceptor incorporation in SiC epilayers grown at high growth rate with chloride-based CVD

Ge incorporation inside 4H-SiC during homoepitaxial growth by chemical vapor deposition

Incorporation of dopants in epitaxial SiC layers grown with fluorinated CVD chemistry

Contact Info

Product

Resources

About