We report a novel technique for quantum well intermixing which is simple, reliable and low cost, and appears universally applicable to a wide range of material systems. The technique involves the deposition of a thin layer of sputtered SiO2 and a subsequent high temperature anneal. The deposition process appears to generate point defects at the sample surface, leading to an enhanced intermixing rate and a commensurate reduction in the required anneal temperature. Using appropriate masking it is possible to completely suppress the intermixing process, enabling large differential band gap shifts (over 100 meV) to be obtained across a single wafer.

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Articles you may be interested inQuasi-phase matched second-harmonic generation in an Al x Ga 1−x As asymmetric quantum-well waveguide using ion-implantation-enhanced intermixing Properties of the second-order nonlinear optical susceptibility χ (2) in asymmetric undoped AlGaAs/InGaAs double quantum wells Quasiphase matched surface emitting second harmonic generation in periodically reversed asymmetric GaAs/AlGaAs quantum well waveguide

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