A universal damage induced technique for quantum well intermixing

Kowalski, O.P.; Hamilton, C.J.; McDougall, S.D.; Marsh, J.H.; Bryce, A.C.; Rue, R.M. De La; Vögele, B.; Stanley, C.R.; Button, Chris; Roberts, J.S.

doi:10.1063/1.120765

Cited by 113 publications

(44 citation statements)

References 6 publications

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“…Following development, the pattern was transferred to the underlying 500-nm-thick SiO layer through reactive ion etching in a CHF plasma and the UV3 resist was subsequently removed in an O plasma. Disordering of the superlattice relied upon point defect generation through sputtered-silica deposition [19]. In the areas protected by the 500-nm-thick PECVD SiO layer the disordering process was suppressed while those areas exposed to sputtered silica were disordered.…”

Section: Photoluminescence Measurements and Quantum-well Intermixingmentioning

confidence: 99%

Dispersion and Modulation of the Linear Optical Properties of GaAs–AlAs Superlattice Waveguides Using Quantum-Well Intermixing

Kleckner

Helmy

Zeaiter³

et al. 2006

IEEE J. Quantum Electron.

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Abstract-We report on the large modulation of the optical properties of a 14:14 monolayer GaAs-AlAs superlattice waveguide following quantum-well intermixing. Low-temperature photoluminescence measurements illustrate a large 169-meV differential blue-shift obtained between the disordering-suppressed and disordering-enhanced materials. Effective index measurements are presented as a function of polarization, for both the as-grown and disordered material for near-bandedge and half-bandedge wavelengths, which is the wavelength range 775-1550 nm. The largest effective refractive index shift observed was 9 10 2 which exceeds that previously reported for disordered AlGaAs ternary multilayer structures, and illustrates the potential of the superlattice for the fabrication of etch-free, planar optical components with large index contrast.

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Section: Photoluminescence Measurements and Quantum-well Intermixingmentioning

confidence: 99%

Dispersion and Modulation of the Linear Optical Properties of GaAs–AlAs Superlattice Waveguides Using Quantum-Well Intermixing

Kleckner

Helmy

Zeaiter³

et al. 2006

IEEE J. Quantum Electron.

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“…In this paper, Bragg coupling measurements were performed for both TE-and TM-polarised modes in a slab waveguide containing a 600 nm 14:14 monolayer GaAs/AlAs superlattice core both asgrown and after QWI at wavelengths centered around 830 nm and 1520 nm. The QWI technique used in this paper was the sputtered silica method [17]. The QPM average refractive index is taken to be the simple average of the as-grown and QWI values, which are themselves obtained by quadratic fits to the measured data in each of the wavelength bands.…”

Section: Theorymentioning

confidence: 99%

Difference Frequency Generation by Quasi-Phase Matching in Periodically Intermixed Semiconductor Superlattice Waveguides

Wagner

Holmes

Younis

et al. 2011

IEEE J. Quantum Electron.

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Abstract-Wavelength conversion by difference frequency generation is demonstrated in domain-disordered quasi-phase matched waveguides. The waveguide structure consisted of a GaAs/AlGaAs superlattice core that was periodically intermixed by ion-implantation. For quasi-phase matching periods of 3.0-3.8 µm, degeneracy pump wavelengths were found by secondharmonic generation experiments for fundamental wavelengths between 1520-1620 nm in both type-I and type-II configurations. In the difference frequency generation experiments, output powers up to 8.7 nW were generated for the type-I phase matching interaction, and 1.9 nW for the type-II interaction. The conversion bandwidth was measured to be over 100 nm covering the C, L, and U optical communications bands, which agrees with predictions.

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“…Such effects have already been discussed in Ref. 21. We believe the defects created during the annealing process are responsible for the increase in α i in the annealed devices.…”

Section: Wavelength (Nm)mentioning

confidence: 65%

Effect of annealing InGaP/InAlGaP laser structure at 950°C on laser characteristics

Al-Jabr¹,

Mishra²,

Majid³

et al. 2016

J. Nanophoton

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Abstract. We achieved considerable laser diode (LD) improvement after annealing InGaP/ InAlGaP laser structure at 950°C for a total annealing time of 2 min. The photoluminescence intensity is increased by 10 folds and full-wave at half-maximum is reduced from ∼30 to 20 nm. The measured LDs exhibited significantly reduced threshold current (I th ), from 2 to 1.5 A for a 1-mm long LD, improved internal efficiency (η i ), from 63% to 68%, and increased internal losses α i , from 14.3 to 18.6 cm −1 . Our work suggests that the use of strain-induced quantum well intermixing is a viable solution for high-efficiency AlGaInP devices at shorter wavelengths. The advent of laser-based solid-state lighting (SSL) and visible-light communications (VLC) highlighted the importance of the current findings, which are aimed at improving color quality and photodetector received power in SSL and VLC, respectively, via annealed red LDs. © The Authors. Published by SPIE under a Creative Commons Attribution 3.0 Unported License. Distribution or reproduction of this work in whole or in part requires full attribution of the original publication, including its DOI.

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A universal damage induced technique for quantum well intermixing

Cited by 113 publications

References 6 publications

Dispersion and Modulation of the Linear Optical Properties of GaAs–AlAs Superlattice Waveguides Using Quantum-Well Intermixing

Dispersion and Modulation of the Linear Optical Properties of GaAs–AlAs Superlattice Waveguides Using Quantum-Well Intermixing

Difference Frequency Generation by Quasi-Phase Matching in Periodically Intermixed Semiconductor Superlattice Waveguides

Effect of annealing InGaP/InAlGaP laser structure at 950°C on laser characteristics

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