This work focuses on dipole antenna-coupled metal-oxide-metal diodes, which can be used for the detection of long wave infrared radiation. These detectors are defined using electron beam lithography and fabricated with shadow evaporation metal deposition. Along with offering complementary metal oxide semiconductor compatible fabrication, these detectors promise high speed and frequency selective detection without biasing, a small pixel footprint, and full functionality at room temperature without cooling. Direct current current-voltage characteristics are presented along with detector response to 10.6μm radiation. The detection characteristics can be tailored to provide for multispectral imaging in specific applications by modifying device geometries.
Infrared (IR) detectors have been fabricated consisting of antenna-coupled metal-oxide-metal diodes (ACMOMDs). These detectors were defined using electron beam lithography with shadow evaporation metal deposition. They are designed to be sensitive to the IR range and work at room temperature without cooling or biasing. In order to achieve large arrays of ACMOMDs, nanotransfer printing have been used to cover a large area with metal-oxide-metal (MOM) diodes and with antenna structures. The printed antenna structures consist of gold and aluminum and exhibit a low electrical resistivity. A large area array of MOM tunneling diodes with an ultrathin dielectric ( 3.6-nm aluminum oxide) has also been fabricated via the transfer-printing process. The MOM diodes exhibit excellent tunneling characteristics. Both direct and Fowler-Nordheim tunneling has been observed over eight orders of magnitude in current density. Static device parameters have been extracted via kinetic Monte Carlo simulations and have confirmed the existence of a dipole layer at the aluminum/aluminum oxide interface of the printed tunneling diodes. The mechanical yield of the transfer-printing process for the MOM tunneling diodes is almost a 100%, confirming that transfer printing is suitable for large area effective fabrication of these quantum devices.
Articles you may be interested inPrinted array of thin-dielectric metal-oxide-metal (MOM) tunneling diodes Thermal infrared detection using dipole antenna-coupled metal-oxide-metal diodes J. Vac. Sci. Technol. B 27, 11 (2009); 10.1116/1.3039684 Direct-write electron-beam lithography of an IR antenna-coupled microbolometer onto the surface of a hemispherical lensThe authors have designed a new procedure for fabrication of infrared ͑IR͒ sensors. These sensors consist of a dipole antenna coupled with a metal-oxide-metal ͑MOM͒ ͑Al-AlO x -Pt͒ diode. The surface of electron beam evaporated Al, serving as one of the electrodes, is cleaned using an Ar plasma, followed by in situ controlled growth of the tunneling oxide, AlO x . The antenna, its leads, and the overlap of the Al and Pt electrodes that defines the MOM overlap area are all defined using electron beam lithography. The MOM overlap area of these devices is as small as 50ϫ 80 nm 2 . Features of our process include the use of dissimilar metals for the formation of the MOM diode, small MOM diode size, and controlled etching and regrowth of the tunneling oxide. A CO 2 laser at 10.6 m was used for the IR characterization of these sensors. Current-voltage and IR measurements are presented. The normalized detectivity ͑D ء ͒ for these devices was found to be 2.13ϫ 10 6 cm Hz 1/2 W −1 .
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