The oxygen content of silicon wafers has been determined by infrared absorption and photon activation analysis (PAA). We find a linear relationship between the absorption coefficient ~ox and the oxygen content (PAA). The conversion factor ~ox is 3.0 • 10 '7 cm -2, in remarkable agreement with various recent investigations employing independent analytical methods.The interstitial oxygen content of silicon crystals plays an important role in modern device technology due to its electrical behavior and its dominant influence on precipitation for internal gettering kinetics (1). Its amount is commonly determined spectroscopically by measuring Key words: interstitial "oxygen in silicon, infrared absorption, photon activation analysis.) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 128.187.103.98 Downloaded on 2015-03-16 to IP ABSTRACT Mercury telluride layers have been grown on cadmium telluride substrates, by the reaction of diethyltelluride and mercury. Typical growth rates, at 415°C, are 3.3 ~m/h. Resulting films had an apparent Hall mobility of 1 x 105 cm2/V-s at liquid nitrogen temperature, and an effective electron concentration of 2 x 10'G/cm 3. The growth and electrical characteristics of these films are described in this paper.
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