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An analysis, by nuclear methods, of AF3 and MgF2 thin films has been made using 2.5 MeV He+; backscattered alpha -particles and K X-rays emitted in ( alpha ,X) reactions are observed. The impurity concentrations are strongly dependent on the conditions of preparation and can reach high values. Electrical properties of such thin films appear to be nearly independent of the impurity concentrations and are discussed in the framework of the Mott-Davis model.

Projectile and target X-ray cross-sections have been measured in collisions of bare and hydrogenlike Silicon ions with argon atoms. Projectile energies are 125MeV and 153 MeV, i.e. the intermediate velocity region for K-shell capture. Coincidence measurements between X-ray photons and the scattered Si "+ projectiles with charge states n-1, n-2 and n-3 have been made. The relative contribution of charge exchange and direct ionization (or excitation) of the target K-shell has been obtained directly by this new method. Double K-shell electron transfer is demonstrated to be very large in the case of fully stripped Si ions. A thorough theoretical analysis of the data is carried out and multiple capture processes are evaluated using an independent electron model.

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