Extreme Ultraviolet Lithography (EUVL) is the leading candidate beyond 32nm half-pitch device manufacturing. Having completed the installation of the ASML EUV full-field scanner, IMEC has a fully-integrated 300mm EUVL process line. Our current focus is on satisfying the specifications to produce real devices in our facilities. This paper reports on the imaging fingerprint of the EUV Alpha Demo Tool (ADT), detailing resolution, imaging, and overlay performance. Particular emphasis is given to small pitch contact holes, which are a critical layer for advanced manufacturing nodes and one of the most likely layers where EUVL may take over from 193nm lithography. Imaging of contact holes, pattern transfer and successful printing of the contact hole level on a 32nm SRAM device is demonstrated. The impact of flare and shadowing on EUV ADT performance is characterized experimentally, enabling the implementation of appropriate mitigation strategies.
Recently, we have developed 15.0 inch XGA organic TFT array and its LCD module, which might be world-largest array size and highest resolution in organic based device. This achievement is to be combined with several technical breakthroughs include new organic gate dielectric material, novel ohmic contact technique, and well-optimized process-architectures. Base on the newly developed organic gate dielectric with pentacene, we have obtained world-record field effect TFT mobilities in excess of 7cm 2 /Vsec and excellent on/off ratios as ~ 10 6 . For jumping up the OTFT research activities from laboratory scale to real production line, we have developed two key technologies. One is the new ohmic contact process with very common materials in the current LCD manufacturing such as ITO; the bottom contact structured OTFT with ITO source-drain electrode shows much the same performances as that with gold source-drain electrode. The other key technology to realize the large size organic device is that of optimizing the array structure to minimize the OTFT performance degradations. By combining these novel technologies, a 15.0" XGA prototype LCD panel is fabricated and shows good display performance.
In this paper, we describe the formatting guidelines for the SID: International Symposium Digest of Technical Papers. By downloading this template from the website, you will have the formats for your article, so that it can be electronically submitted.
We successfully synthesized organized Carbon nanotubes (CNTs) and Silicon Nanowires (SiNWs) arrays using LPAA. This approach can yield very dense assemblies of nano-objects with a planar-type organization compatible with existing tools inherited from advanced microelectronic processes and adapted to electronic devices as field effect transistors, interconnects, sensors, etc. CNTs/SiNWs were grown using Hot-filament Chemical Vapor Deposition (HFCVD) within lateral-type porous anodic alumina. We demonstrate that the pulsed electrodeposition of metal nanoparticles to be further used as catalysts inside the membranes requires specific thinning and pore widening process to remove the alumina barrier layer located at the bottom of the pores. The growth of CNTs was found to strongly depend on the electrodeposition conditions as well as on the CVD parameters. In addition, we found that introducing atomic hydrogen (generated using a hot-wire) as etching agent was essential to prevent parasitic carbon/silicon deposition on the surface of PAA or on the wall of pores and to improve CNTs/NWs growth. Such organized CNTs/SiNWs arrays are very promising as advanced microelectronic devices and their potentiality for photosensing applications were investigated.
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