We report the first experimental observation of terahertz (THz) radiation from the rear surface of a solid target while interacting with an intense laser pulse. Experimental and two-dimensional particle-in-cell simulations show that the observed THz radiation is mostly emitted at large angles to the target normal. Numerical results point out that a large part of the emission originates from a micron-scale plasma sheath at the rear surface of the target, which is also responsible for the ion acceleration. This opens a perspective for the application of THz radiation detection for on-site diagnostics of particle acceleration in laser-produced plasmas.

We present THz ultrashort pulse detection by a photoconductive antenna array consisting of 16 photoconductive antennas. The efficient excitation of the photoconductive antennas has been realized by a microlens array which generates 16 single spots from the exciting fs-laser beam. This combination of optoelectronics and microoptics improves the detection efficiency by an order of magnitude in comparison to an excitation by a line focus.

The generation and propagation of surface plasmon polaritons in periodic metallic structures using femtosecond terahertz pulses is reported. The transmission and emission properties clearly show the influence of Wood’s anomalies. The velocity of propagation is determined experimentally and is in good agreement with a simple model.

A large-area terahertz emitter based on an interdigital finger electrode photoconductive switch on low-temperature grown GaAs attached to a hexagonal microlens array is demonstrated. The hexagonal arranged microlenses direct the incident IR excitation pulses into specified electrode gaps, resulting in constructive interference in the terahertz far field. Using a Ti:sapphire oscillator running at 80 MHz with 150 fs pulses, 6.5 mu m THz average power at 540 mW optical excitation is obtained. The maximum IR-to-terahertz conversion efficiency achieved is >= 1.35x10(-5)

The optimal structural parameters for an antireflective structure in high resistive float zone silicon are deduced for a rectangular and a hexagonal structure. For this the dependence of the effective index from the filling factor was calculated for both grating types. The structures were manufactured by the Bosch-process. The required structural parameters for a continuous profile require an adaption of the fabrication process. Challenges are the depth and the slight positive slope of the structures. Starting point for the realization of the antireflective structures was the manufacturing of deep binary gratings. A rectangular structure and a hexagonal structure with period 50 mum and depth 500 mum were realized. Measurements with a THz time domain spectroscopy setup show an increase of the electric field amplitude of 15.2% for the rectangular grating and 21.76% for the hexagonal grating. The spectral analysis shows that the bandwidth of the hexagonal grating reaches from 0.1 to 2 THz.