ResumoAnalisamos neste trabalho, a refletividade de um espelho de Bragg composto por materiais da família do antimônio (AlGaAsSb/AlAsSb) dopado com telúrio. As amostras foram preparadas através da técnica de epitaxia por feixe molecular MBE (Molecular Beam Epitaxy) e as medidas de refletividade pela técnica de espectroscopia de infravermelho por transformada de Fourier FTIR (Fourier Transform InfraRed). Para discussão das propriedades do espelho de Bragg comparamos a refletividade obtida experimentalmente e uma simulação baseada no formalismo matricial. Palavras-chave: semicondutores, refletividade, Espelho de Bragg, AlGaAsSb, AlAsSb.
AbstractThe reflectivity of a Bragg mirror composed by materials of the antimony family (AlGaAsSb/AlAsSb), doped with tellurium, is analyzed in this work. The sample was prepared by molecular beam epitaxy (MBE) and the reflectivity was measured by Fourier Transform Infra-Red Spectroscopy (FTIR). In order to discuss the Bragg mirror properties, the experimental reflectivity is compared to a simulation of the reflectivity based on the matrix formalism.
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