The radiation defect distribution in boron implanted Si with and without ultrasound (US) treatment have been investigated. Obtained results have shown the significant influence of the in situ US treatment on the defect formation. The defect concentration decreases both in the as-implanted and post-annealed samples, implanted with US-treatment. The physical model of this effect, connecting it with stimulated diffusion of silicon interstitials under the US treatment have been proposed.
The results of researches on the interaction of accelerated ions with a solid at the in situ ultrasonic treatment are reported. A proposed combined method of acoustically stimulated ion beam doping of solid-state targets allows one to efficiently control the redistribution of radiationinduced defects that emerge during the interaction of accelerated particles with the solid. This method makes it possible to affect the rate of quasichemical reactions in nano-sized structures, stimulate the acceleration or deceleration of mass transfer processes, and change conditions of formation, growth, and decay of phases in solid-state matrices.
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