Ultrasound effect on radiation damages in boron implanted silicon

Abstract

The radiation defect distribution in boron implanted Si with and without ultrasound (US) treatment have been investigated. Obtained results have shown the significant influence of the in situ US treatment on the defect formation. The defect concentration decreases both in the as-implanted and post-annealed samples, implanted with US-treatment. The physical model of this effect, connecting it with stimulated diffusion of silicon interstitials under the US treatment have been proposed.

Improvement of Photosensitivity of Si- Sensors Made by the Method of Acoustostimulated Implantation of Boron and Arsine Ions

“…Ó äàí³é ðîáîò³ ðîçâèâàºòüñÿ íîâèé ï³äõ³ä äî âèð³øåííÿ çàäà÷³ ïîë³ïøåííÿ ïàðàìåòð³â êðå-ìí³ºâèõ ñåíñîð³â âèïðîì³íþâàííÿ. Öå -âèêîðèñòàííÿ óëüòðàçâóêîâî¿ îáðîáêè (ÓÇÎ) íà-ï³âïðîâ³äíèêîâèõ ïëàñòèí â ïðîöåñ³ éîííî¿ ³ìïëàíòàö³¿ ç ìåòîþ êåðóâàííÿ êîíöåíòðàö³ºþ òî÷êîâèõ äåôåêò³â ³ ñòèìóëþâàííÿ åëåêòðè÷íî¿ àêòèâàö³¿ ³ìïëàíòîâàíèõ äîì³øîê [3]. ijéñíî, ê³íåòèêà ïåðåõîäó òàêî¿ íàäçâè÷àéíî íå ð³âíî-âàaeíî¿ äîì³øêîâî-äåôåêòíî¿ ñòðóêòóðè êðèñòàëó, ÿêà ðåàë³çóºòüñÿ â ïðîöåñ³ ³ìïëàíòàö³¿, äî ð³âíîâàaeíîãî ñòàíó äóaeå ÷óòëèâà, çîêðåìà, äî àêóñòè÷íîãî ïîëÿ.…”